Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Gabriel Oliveira Louzada"'
Autor:
Marcos N. Watanabe, Fábio Izumi, Ricardo C. Rangel, Sebastião G. Dos Santos Filho, Gabriel Oliveira Louzada, Stefanie Pereira Regis, Verônica Christiano Abê, William Tsuyoshi Shiga
Publikováno v:
Journal of Integrated Circuits and Systems. 15:1-5
This article discusses fabrication, characteriza-tion and studies of the C-V characteristics of SiO layers depos-ited by PVD on Si-p substrates with doping around 1x1016 cm-3. MOS capacitors (Metal-Oxide-Semiconductor) with Al/SiO2/Si-P, Al/SiO/Si-P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56e1158031c0e43b7cfbc9cd5277b903
https://doi.org/10.29292/jics.v15i2.175
https://doi.org/10.29292/jics.v15i2.175
Autor:
Sebastião G. Dos Santos Filho, Ricardo C. Rangel, Gabriel Oliveira Louzada, Marcos N. Watanabe
Publikováno v:
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro).
This article discusses the use of glass coverslips with thickness in the range of 70 to 108 µm as anti-reflection layers in order to increase the efficiency of MOS photovoltaic cells with Al/SiO 2 (1.7 nm)/Si-P structure fabricated on 10 Ω.cm subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf86668e4c81b201f1cc6a822dc98d90
https://doi.org/10.1109/sbmicro50945.2021.9585766
https://doi.org/10.1109/sbmicro50945.2021.9585766