Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Gabriel Micard"'
Publikováno v:
SiliconPV Conference Proceedings, Vol 2 (2024)
To obtain a closed and smooth surface of a porous Si layer for an epitaxial growth of a silicon wafer, the porous Si must be reorganized. To understand the reorganization process, the evolution of the pores is investigated in this contribution. The r
Externí odkaz:
https://doaj.org/article/c23f00acf21e42c8ac05c4f0892c4ff7
Publikováno v:
SiliconPV Conference Proceedings, Vol 1 (2024)
To grow a defect-free epitaxial silicon wafer (EpiWafer) on a reorganized porous silicon layer stack, the surface must be closed, smooth and particle-free. A post-porosification cleaning step prior to reorganization should significantly reduce the de
Externí odkaz:
https://doaj.org/article/3c16ae684db84c8d8dde754b84d6da1e
Autor:
Adrian Wenzel, Gunnar Schubert, Matthias Kindl, Tobias Messmer, Manuela Linke, Gabriel Micard, Adrian Minde
Publikováno v:
ISGT Europe
We present an innovative decision support system (DSS) for distribution system operators (DSO) based on an artificial neural network (ANN). A trained ANN has the ability to recognize problem patterns and to propose solutions that can be implemented d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2964368e8829b98380d03e6a906c5b04
https://doi.org/10.1109/isgteurope.2019.8905733
https://doi.org/10.1109/isgteurope.2019.8905733
Autor:
Josh Engelhardt, Fabian Geml, Gabriel Micard, Giso Hahn, Luis-Frieder Reinalter, Jonathan Steffens
Publikováno v:
15th International Conference on Concentrator Photovoltaic Systems (CPV-15).
Doped Si-based glasses such as boron silicate glass have a variety of applications in photovoltaics. A well suited, fast method for analysing the elemental composition of these layers is glow discharge optical emission spectroscopy. In addition to qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f8d39c63ab21196c0252aef91f1c86c
https://doi.org/10.1063/1.5123808
https://doi.org/10.1063/1.5123808
Autor:
Giso Hahn, Amir Dastgheib-Shirazi, Johannes Rinder, Michael Steyer, Gabriel Micard, Barbara Terheiden
Publikováno v:
Energy Procedia. 92:457-465
Previous studies of thermal oxidation on a doped structure showed that growth of thermal SiO2 depends on the charge carrier concentration. Here we show that growth behavior of a thermal SiO2 layer also depends strongly on the emitter’s electrically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70345a8cb7c6e248243dcbf9bf0f9c8f
Publikováno v:
physica status solidi (a). 213:1329-1339
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c4e2fa708c820fe7c4976fbe8dcfd95
https://doi.org/10.1002/pssa.201532680
https://doi.org/10.1002/pssa.201532680
Publikováno v:
physica status solidi (a). 213:1317-1323
In recent years the relevance of passivated emitter and rear contact solar cells for industrial application increased due to significantly higher cell efficiencies compared to full area back surface field solar cells. However, the formation of local
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3adc5e3d706d38e55a5af9569a8add0
https://doi.org/10.1002/pssa.201532753
https://doi.org/10.1002/pssa.201532753
In many solar cell concepts, the recombination at local contacts is a bottleneck for the efficiency. Therefore, an optimized doping profile underneath the metal contact would improve the cell performance. We investigate the saturation current density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fa59706f8bfa09e9aedd5f80de9eb2c
The series resistance (RS) of a solar cell, that influences fill factor and thus efficiency, is usually decomposed into individual components for development of optimization strategies. In this contribution we introduce a method to extract Rs of each
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6fbd25907c4c26dab81c5aace7f1fd0
Publikováno v:
Progress in Photovoltaics: Research and Applications. 23:135-149
A theoretical analysis of the power loss and series resistance of the front side emitter in silicon solar cells is presented. Existing 1D models (infinitely long finger) and 2D models (including the effect of busbars) of emitter series resistance con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ef888e13fd963f77603c87f0544f669
https://doi.org/10.1002/pip.2403
https://doi.org/10.1002/pip.2403