Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Gabriel Henrique Monteiro Tavares"'
Autor:
Guilherme Marcio Soares, Gabriel Henrique Monteiro Tavares, Henrique A. C. Braga, Pedro S. Almeida, Wesley Josias de Paula
Publikováno v:
IET Power Electronics. 13:2960-2970
The aim of this study is to review the state-of-the-art of recent prediction methods for power metal-oxide-semiconductor field-effect transistors (MOSFETs) switching losses using datasheet parameters. A detailed technical literature investigation is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::690a8acbee2e48192bd4b7c12454bba0
https://doi.org/10.1049/iet-pel.2019.1003
https://doi.org/10.1049/iet-pel.2019.1003
Autor:
Wesley Josias de Paula, Guilherme Marcio Soares, Henrique A. C. Braga, Pedro S. Almeida, Gabriel Henrique Monteiro Tavares
Publikováno v:
Eletrônica de Potência. 25:283-292
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4fd51e874b00574d5d87dc5eb906fc3
https://doi.org/10.18618/rep.2020.3.0010
https://doi.org/10.18618/rep.2020.3.0010
Autor:
Gabriel Henrique Monteiro Tavares, Wesley Josias de Paula, Guilherme Marcio Soares, Denis de Castro Pereira, Henrique A. C. Braga, Pedro S. Almeida
Publikováno v:
2018 13th IEEE International Conference on Industry Applications (INDUSCON).
This paper presents a study of estimation techniques applied to power MOSFET switching losses. Three loss prediction methods are, then, chosen for this proposal. In this context, the first one uses simple equations to describe the switching transient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d675c03a821a50856f430c563dda564
https://doi.org/10.1109/induscon.2018.8627228
https://doi.org/10.1109/induscon.2018.8627228
Autor:
Gabriel Henrique Monteiro Tavares, Henrique A. C. Braga, Marlon L. G. Salmento, Denis de Castro Pereira, Wesley Josias de Paula
Publikováno v:
2017 Brazilian Power Electronics Conference (COBEP).
This paper describes a FPGA-based (Field Programmable Gate Array) high-frequency signal generation platform, which aims to drive GaN (Gallium nitride) power semiconductor devices. FPGA is a digital platform that operates at frequency levels up to GHz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1e99802bf9bb75395d6c4150780ca76
https://doi.org/10.1109/cobep.2017.8257309
https://doi.org/10.1109/cobep.2017.8257309
Autor:
Wesley Josias de Paula, Pedro L. Tavares, Denis de Castro Pereira, Gabriel Henrique Monteiro Tavares, Henrique A. C. Braga, Pedro S. Almeida, Filipe L. Silva
Publikováno v:
2017 Brazilian Power Electronics Conference (COBEP).
Gallium Nitride (GaN) are, currently, the most promising semiconductor material concerning new power devices applied in switched-mode power supplies. The great advantages of GaN transistors are their outstanding properties as raw material availabilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::587053f3941796052687f730c59ba6a1
https://doi.org/10.1109/cobep.2017.8257254
https://doi.org/10.1109/cobep.2017.8257254