Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Gabriel Augusto da Silva"'
Autor:
José Roberto Banin Júnior, Rodrigo Alves de Lima Moreto, Gabriel Augusto Da Silva, Salvador Pinillos Gimenez
Publikováno v:
Journal of Integrated Circuits and Systems. 17:1-11
Analog designers usually cascade several basic analog building blocks that were previously optimized to increase the open-loop voltage gain (AV0) and to avoid the increasing of the Design and Optimization Cycle Time (DOCT) of a given System-On-a-Chip
Autor:
Ana Lúcia de Lima Vieira Pinto, Direne de Fátima Xavier, Jaqueline Ramos, Ana Stela Pereira da Silva, Ana Carolina Oliveira Ferreira, Helizabelle Jennifer Gomes Pereira, Diba Maria Sebba Tosta de Souza, Caroline Alves Andrade, Luiz Augusto Mota Lino, Geraldo Magela Salomé, Taila Flávia da Silva, Marcia Rafaela Rodrigues, Lúcia Helena Rocha Vilela, Leticia Gabriele Guimarães, Rita de Cássia Pereira, Gabriel Augusto da Silva, Manolo Homero Munoz Abrigo, Viviane Aparecida de Souza Silveira, Anna Julya Vilela Morais, Jéssica De Fátima Martins, Maria Teresa de Jesus Pereira, Isabela Motta De Almeida, Fernanda Ribeiro Borges, Ana Paula Reis Souza, Maria Cristina Porto e Silva, Gustavo Gabriel de Lima Silva, Rafler Augusto Rodrigues da Silva, Rodrigo Luís de Faria, Roberto Ribeiro Rocha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb1053e2eea75879b1708972de98f3c5
https://doi.org/10.37008/978-65-5368-174-3.05.01.23
https://doi.org/10.37008/978-65-5368-174-3.05.01.23
Publikováno v:
2022 36th Symposium on Microelectronics Technology (SBMICRO).
Publikováno v:
2022 36th Symposium on Microelectronics Technology (SBMICRO).
Autor:
Eddy Simoen, Vinicius Vono Peruzzi, Salvador Pinillos Gimenez, William Souza Cruz, Cor Claeys, Gabriel Augusto da Silva
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:754-759
This article describes an experimental comparative study of the matching between the Octo conventional (octagonal gate geometry) and Conventional (rectangular gate shape) n-channel Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), w
Autor:
Salvador Pinillos Gimenez, Carlos Eduardo Thomaz, José Roberto Banin Júnior, Gabriel Augusto da Silva, Rodrigo Alves de Lima Moreto
Publikováno v:
Analog Integrated Circuits and Signal Processing. 106:293-306
This paper describes a pioneering methodology to design, optimize, and reduce the total gate area of robust Operational Transconductance Amplifiers (OTAs). The Single-Ended Single-Stage (SESS) OTA has been chosen to validate the proposed technique by
Publikováno v:
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro).
One of most challenges of nanoelectronics area is to further increase the integration capacity and electrical performance of Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs). Several approaches have been done to reach this challenge
Publikováno v:
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro).
This article describes, for the first time, the study of electrical behavior of the first element belonging to the family of Second Generation of layout styles for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), entitled Half-Diamond. I
Autor:
Salvador Pinillos Gimenez, Carlos Eduardo Thomaz, Rodrigo Alves de Lima Moreto, Gabriel Augusto da Silva, José Roberto Banin Júnior
Publikováno v:
2021 34th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI).
This paper describes an innovative methodology to design and optimize robust analog Complementary Metal-Oxide-Semiconductor (CMOS) Integrated Circuits (ICs) with Diamond layout style (hexagonal gate shape) for Metal-Oxide-Semiconductor Field-Effect T
Publikováno v:
Discursos, Práticas, Ideias e Subjetividades na Educação 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd9373b70f2f55f47e00ba9d2cf4db5f
https://doi.org/10.22533/at.ed.26821290420
https://doi.org/10.22533/at.ed.26821290420