Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Gabel, Judith"'
Autor:
Gabel, Judith, Pickem, Matthias, Scheiderer, Philipp, Dudy, Lenart, Leikert, Berengar, Fuchs, Marius, Stübinger, Martin, Schmitt, Matthias, Küspert, Julia, Sangiovanni, Giorgio, Tomczak, Jan M., Held, Karsten, Lee, Tien-Lin, Claessen, Ralph, Sing, Michael
Publikováno v:
Adv. Electron. Mater. 2021, 2101006
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to
Externí odkaz:
http://arxiv.org/abs/2202.10778
Autor:
Zapf, Michael, Schmitt, Matthias, Gabel, Judith, Scheiderer, Philipp, Stübinger, Martin, Leikert, Berengar, Sangiovanni, Giorgio, Dudy, Lenart, Chernov, Sergii, Babenkov, Sergey, Vasilyev, Dmitry, Fedchenko, Olena, Medjanik, Katerina, Matveyev, Yury, Gloskowski, Andrei, Schlueter, Christoph, Lee, Tien-Lin, Elmers, Hans-Joachim, Schönhense, Gerd, Sing, Michael, Claessen, Ralph
Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show th
Externí odkaz:
http://arxiv.org/abs/2110.15158
Autor:
Bauernfeind, Maximilian, Erhardt, Jonas, Eck, Philipp, Thakur, Pardeep K., Gabel, Judith, Lee, Tien-Lin, Schäfer, Jörg, Moser, Simon, Di Sante, Domenico, Claessen, Ralph, Sangiovanni, Giorgio
Publikováno v:
Nat. Commun., 12, 5396 (2021)
Large-gap quantum spin Hall insulators are promising materials for room-temperature applications based on Dirac fermions. Key to engineer the topologically non-trivial band ordering and sizable band gaps is strong spin-orbit interaction. Following Ka
Externí odkaz:
http://arxiv.org/abs/2106.16025
Autor:
Leikert, Berengar, Gabel, Judith, Schmitt, Matthias, Stübinger, Martin, Scheiderer, Philipp, Veyrat, Louis, Lee, Tien-Lin, Sing, Michael, Claessen, Ralph
Publikováno v:
Phys. Rev. Materials 5, 065003 (2021)
Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO$_3$ capp
Externí odkaz:
http://arxiv.org/abs/2104.06187
Autor:
Gabel, Judith
Due to their complex chemical structure transition metal oxides display many fascinating properties which conventional semiconductors lack. For this reason transition metal oxides hold a lot of promise for novel electronic functionalities. Just as in
Autor:
Scheiderer, Philipp, Schmitt, Matthias, Gabel, Judith, Stübinger, Martin, Schütz, Philipp, Dudy, Lenart, Schlueter, Christoph, Lee, Tien-Lin, Sing, Michael, Claessen, Ralph
Publikováno v:
Advanced Materials 30, 1706708 (2018)
The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds a
Externí odkaz:
http://arxiv.org/abs/1807.05724
Autor:
Maier, Patrick, Hartmann, Fabian, Gabel, Judith, Frank, Maximilian, Kuhn, Silke, Scheiderer, Philipp, Leikert, Berengar, Sing, Michael, Worschech, Lukas, Claessen, Ralph, Höfling, Sven
Publikováno v:
Applied Physics Letters 110, 093506 (2017)
We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off the inher
Externí odkaz:
http://arxiv.org/abs/1610.05146
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