Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Gaas detectors"'
Publikováno v:
Materials Today: Proceedings. 53:293-298
A radiation hardness study of semi-insulating GaAs detectors against 5 MeV electrons is presented in this paper. The influence of cumulative dose in the range from 136 up to 2000 kGy on alpha-spectrometry of 241Am is evaluated for investigated detect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdadf349d835ad30e98c0e93ceaf6583
https://doi.org/10.1016/j.matpr.2021.06.457
https://doi.org/10.1016/j.matpr.2021.06.457
Autor:
John F. Klem, Chris P. Hains, Patrick Sean Finnegan, Phillip H. Weiner, Donika Altamirano, Marcos O. Sanchez, Quinn Looker, Matthew B. Jordan, Chad A. Stephenson, Michael G. Wood
Publikováno v:
ECS Meeting Abstracts. :1837-1837
Sandia National Laboratories is developing GaAs photodiode arrays compatible with the Ultra-Fast X-ray Imager (UXI) platform for sub-nanosecond hard x-ray diagnostics. These 25 µm pitch pixelated detector arrays are particularly useful in the diagno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86d76c52c616593590532642ef854e3e
https://doi.org/10.1149/ma2020-02261837mtgabs
https://doi.org/10.1149/ma2020-02261837mtgabs
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 648:S8-S11
The widely growing interest to the digital diagnostics and analysis systems, that have many advantages in comparison with the traditional (film) systems, in data taking, data storing, and data transmitting, requires a new detection technology. One of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce962267f90e47990fdb88d8827a7fbc
https://doi.org/10.1016/j.nima.2011.02.030
https://doi.org/10.1016/j.nima.2011.02.030
Autor:
Marcello Rossetti Conti, Paolo Maestro, Salvator Roberto Amendolia, V. Marzulli, Paolo Russo, E. Bertolucci, E. Pernigotti, U. Bottigli, Valeria Rosso, Maria Agnese Ciocci, A. M. Stefanini, Simone Stumbo, N. Romeo, Maria Evelina Fantacci, Maria Giuseppina Bisogni, Pasquale Delogu
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 434:14-17
We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51859822fcc04913558e1ebf32d1edeb
https://doi.org/10.1016/s0168-9002(99)00422-2
https://doi.org/10.1016/s0168-9002(99)00422-2
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 563:74-77
The influence of the etched trenches on detection properties of strip GaAs detectors is described together with results obtained by transverse laser scan across the strips. The charge collection efficiency (CCE) shows an improvement in the case of tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06f769ae527bd7bef848cc98c6fa3360
https://doi.org/10.1016/j.nima.2006.01.069
https://doi.org/10.1016/j.nima.2006.01.069
Autor:
A. Bchetnia, M Zazoui, Francesco Quarati, M. Lenoir, J.C. Bourgoin, N. Mañez, J.P. Montagne, D.W. Davidson, D. Chambellan, Kevin M. Smith, Val O'Shea, Ph. Pillot, G.C. Sun, O. Gal, A. Al-Ajili
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 546:140-147
We first briefly review the performances for X-ray detection which are obtained using thin epitaxial GaAs layers. We then show that good detectors can be realized on thick and large area epitaxial GaAs layers which are now available, making them suit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59f60da75d59b9656ae115cec348b348
https://doi.org/10.1016/j.nima.2005.03.110
https://doi.org/10.1016/j.nima.2005.03.110
Autor:
V. S. Pantuev, V. I. Egorkin, S. S. Shmelev, V. N. Rasputnyi, A. A. Gorbatsevich, V. A. Bespalov, A. V. Vorontsov, Yu. N. Sveshnikov, E. A. Il’ichev, A. V. Kulakov, G. P. Zhigal'skii, B. G. Nalbandov
Publikováno v:
Technical Physics. 49:310-317
Results of complex experiments aimed at finding a relationship between the properties of initial GaAs single-crystal wafers and epitaxial films and the threshold spectrometric characteristics of ionizing radiation detectors are reported.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4003aa1aea53484fab3386f8ec4f561
https://doi.org/10.1134/1.1688416
https://doi.org/10.1134/1.1688416
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 509:26-29
The aim of the study is to show that the thick epitaxial layers we grow using the Chemical Reaction method, a method which overcomes the difficulties in producing thick epitaxial layers, can provide detectors which have the same high performances, es
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ae8692d7a41744c324bbdef8eff2509
https://doi.org/10.1016/s0168-9002(03)01543-2
https://doi.org/10.1016/s0168-9002(03)01543-2
Autor:
Marius Pavlovic, K. Sedlackova, A. Sagatova, Vladimír Nečas, Bohumír Zaťko, Marko Fülöp, Pavol Boháček
Publikováno v:
Journal of Instrumentation. 13:C01006-C01006
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89056b56256f2e6b2f87b9df7a5fadde
https://doi.org/10.1088/1748-0221/13/01/c01006
https://doi.org/10.1088/1748-0221/13/01/c01006
Autor:
A. P. Vorobiev, Yu.P. Tsyupa, S. A. Gorokhov, L.P. Okaevich, S. Golovnia, O.B. Koretskaja, O. P. Tolbanov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 494:223-228
The results of the measurements working parameters of GaAs detector samples as the basis for the design of the X-ray sensitive detectors are presented. To select the optimal operating conditions for GaAs detectors the study of the temperature depende
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f84e78c7792c49f55ae15a67c29cc95a
https://doi.org/10.1016/s0168-9002(02)01470-5
https://doi.org/10.1016/s0168-9002(02)01470-5