Zobrazeno 1 - 10
of 4 401
pro vyhledávání: '"GaSb"'
Publikováno v:
Journal of Public Budgeting, Accounting & Financial Management, 2023, Vol. 36, Issue 2, pp. 125-145.
Autor:
Giparakis Miriam, Windischhofer Andreas, Isceri Stefania, Schrenk Werner, Schwarz Benedikt, Strasser Gottfried, Andrews Aaron Maxwell
Publikováno v:
Nanophotonics, Vol 13, Iss 10, Pp 1773-1780 (2024)
InAs/AlSb quantum cascade detectors (QCDs) grown strain-balanced on GaSb substrates are presented. This material system offers intrinsic performance-improving properties, like a low effective electron mass of the well material of 0.026 m 0, enhancing
Externí odkaz:
https://doaj.org/article/3cdbc79c33e742d08730f751fb524d55
Autor:
M. Saravanan, Eswaran Parthasarathy
Publikováno v:
IEEE Access, Vol 12, Pp 56439-56447 (2024)
A triple-metal-gate stacked III–V vertical tunnel field-effect transistor (TM-GS-VTFET) structure is examined. There are two different TM-GS-VTFETs: Device-A, which uses a source pocket, and Device-B, which uses a new source extension approach. Sou
Externí odkaz:
https://doaj.org/article/cd1815e1a0e64402a86809f5a49437ec
Autor:
Marina Ćeran, Dragana Miladinović, Vuk Đorđević, Dragana Trkulja, Aleksandra Radanović, Svetlana Glogovac, Ankica Kondić-Špika
Publikováno v:
Frontiers in Sustainable Food Systems, Vol 8 (2024)
Global agricultural productivity and food security are threatened by climate change, the growing world population, and the difficulties posed by the pandemic era. To overcome these challenges and meet food requirements, breeders have applied and impl
Externí odkaz:
https://doaj.org/article/f78948ca657140f9b501d1cd01a61bdc
Autor:
Marta Różycka, Agata Jasik, Paweł Kozłowski, Krzysztof Bracha, Jacek Ratajczak, Anna Wierzbicka-Miernik
Publikováno v:
Metrology and Measurement Systems, Vol vol. 30, Iss No 4, Pp 809-819 (2023)
The paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the studies, two samples used at different BCl3 gas flow rates were compared and it was found that
Externí odkaz:
https://doaj.org/article/01a1cefabe2d49a08c932b9a5dede0cd
Akademický článek
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Akademický článek
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Autor:
Seung-man Park, Christoph H. Grein
Publikováno v:
Photonics, Vol 11, Iss 6, p 531 (2024)
We report a novel dual-band barrier infrared detector (DBIRD) design using InAs/GaSb type-II superlattices (T2SLs). The DBIRD structure consists of back-to-back barrier diodes: a “blue channel” (BC) diode which has an nBp architecture, an n-type
Externí odkaz:
https://doaj.org/article/2b45a4a0895343a8a085987406600cba
Autor:
Yanxue Yin, Genglin Li, Zixu Sa, Fengjing Liu, Shuo Sun, Xiaoli Sun, Yuechen Jia, Zai-Xing Yang
Publikováno v:
Advanced Photonics Research, Vol 4, Iss 12, Pp n/a-n/a (2023)
Owing to the narrow bandgap and excellent optoelectronic properties, III‐Sb nanowires (NWs) enable efficient optical response from near‐infrared to mid‐infrared, making them ideal candidates for broadband optical modulation. Herein, high‐puri
Externí odkaz:
https://doaj.org/article/30573b9235024639b53d2823f1d90f86
Autor:
Xinming Zhuang, Zixu Sa, Jie Zhang, Mingxu Wang, Mingsheng Xu, Fengjing Liu, Kepeng Song, Tao He, Feng Chen, Zai‐xing Yang
Publikováno v:
Advanced Science, Vol 10, Iss 31, Pp n/a-n/a (2023)
Abstract The inhomogeneous native oxide shells on the surfaces of III–V group semiconductors typically yield inferior and unstable electrical properties metrics, challenging the development of next‐generation integrated circuits. Herein, the nati
Externí odkaz:
https://doaj.org/article/a9898f56114d434786e188370a6daf44