Adaptive Dead-Time Control Design with Low Dead-Time Error in 20 MHz 90 V GaN Gate Driver

Autor: Yifan Hu, Yong Wang, Ying Wang, Ling Peng, Ying Kong

Publikováno v: Electronics; Volume 12; Issue 1; Pages: 211

This paper presents an adaptive dead-time control circuit for a maximum work frequency 20 MHz, maximum voltage level 90 V GaN gate driver. The dead-time is set to prevent straight-through of the upper and lower power transistors of the bridge arm str

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https://doi.org/10.3390/electronics12010211

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Stretching in Time of GaN Active Gate Driving Profiles to Adapt to Changing Load Current

Autor: Jeremy J. O. Dalton, Dawei Liu, David Drury, Harry C. P. Dymond, Jianjing Wang, Mohammad H. Hedayati, Bernard H. Stark

Publikováno v: Dalton, J, Dymond, H C P, Wang, J, Hedayati, M, Liu, D, Drury, D & Stark, B H 2019, Stretching in Time of GaN Active Gate Driving Profiles to Adapt to Changing Load Current . in 2018 IEEE Energy Conversion Congress and Exposition (ECCE 2018) : Proceedings of a meeting held 23-27 September 2018, Portland, Oregon, USA ., 8557531, 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018, Institute of Electrical and Electronics Engineers (IEEE), pp. 3497-3502 . https://doi.org/10.1109/ECCE.2018.8557531

Active gate driving, where the gate signal is actively profiled, has been shown to reduce EMI, overshoot, and switching loss, in silicon power converters. Recently, much faster gate drivers with the ability to profile at a 100 ps resolution have been

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https://doi.org/10.1109/ecce.2018.8557531

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