Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Ga2O3 film"'
Autor:
Shen, Yi a, b, c, Wang, An-Feng a, b, Ma, Hong-Ping a, b, d, ⁎, Qi, Xin a, b, Yuan, Qilong c, ⁎⁎, Yang, Mingyang c, Qiu, Mengting c, Zhang, Bingxue e, Jiang, Nan c, Zhang, Qingchun Jon a, b, d, ⁎⁎⁎
Publikováno v:
In Materials Today Physics December 2024 49
Autor:
Wang, Chen a, Fan, Wei-Hang a, Cao, Rong-Jun a, Fan, Hui-Chen a, Xu, Yi-Hong a, Kang, Pin-Chun b, Wu, Ting-Zhu c, ⁎⁎, Kuo, Hao-Chung d, Lien, Shui-Yang a, e, ⁎, Zhu, Wen-Zhang a
Publikováno v:
In Vacuum July 2024 225
Publikováno v:
In Journal of Luminescence August 2023 260
Autor:
Zhang, Chao a, b, Liu, Kewei a, b, ∗, Ai, Qiu a, Sun, Xuan a, b, Chen, Xing a, b, Yang, Jialin a, Zhu, Yongxue a, Cheng, Zhen a, Li, Binghui a, Liu, Lei a, b, Shen, Dezhen a, b, ∗∗
Publikováno v:
In Materials Today Physics April 2023 33
Autor:
Wang, Chen a, c, Zhang, Yu-Chao a, Fan, Wei-Hang a, Wu, Wan-Yu b, Wuu, Dong-Sing d, Lien, Shui-Yang a, b, c, ∗, Zhu, Wen-Zhang a, c
Publikováno v:
In Vacuum November 2022 205
Autor:
Chen, Yanna a, b, ⁎, Sakata, Osami a, b, c, d, ⁎⁎, Morita, Hiroyuki d, Matsuda, Akifumi d, Jia, Fanhao e, Seo, Okkyun a, b, Kumara, Loku Singgappulige Rosantha a, b, Ina, Toshiaki c, Kobayashi, Eiichi f, Kim, Jaemyung a, b, Song, Chulho b, Hiroi, Satoshi a, Palina, Natalia b, Lou, Yanfang b, Ren, Wei e, Yoshimoto, Mamoru d
Publikováno v:
In Applied Surface Science 15 March 2022 578
Akademický článek
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Autor:
Zhang, Tao a, b, Li, Yifan a, b, Feng, Qian a, b, ∗, Zhang, Yachao a, b, ∗∗, Ning, Jing a, b, Zhang, Chunfu a, b, Zhang, Jincheng a, b, ∗∗∗, Hao, Yue a, b
Publikováno v:
In Materials Science in Semiconductor Processing 1 March 2021 123
Effect of different substrates on Si and Ta co-doped Ga2O3 films prepared by pulsed laser deposition
Publikováno v:
In Journal of Crystal Growth 1 March 2020 533
Autor:
Yi Shen, Hong-Ping Ma, Zhen-Yu Wang, Lin Gu, Jie Zhang, Ao Li, Ming-Yang Yang, Qing-Chun Zhang
Publikováno v:
Crystals, Vol 13, Iss 2, p 301 (2023)
In this work, Sn-doped Ga2O3 films fabricated using plasma-enhanced atomic layer deposition were treated by rapid thermal annealing (RTA). The RTA influence on the chemical state, surface morphology, energy band alignment, and electrical properties o
Externí odkaz:
https://doaj.org/article/13fe42e4878a491c80acd937c1eb7f5b