Zobrazeno 1 - 10
of 89
pro vyhledávání: '"GUZZI, MARIO"'
Autor:
Hodgson, Robert A., Mullins, Deborra, Lu, Sherry X., Guzzi, Mario, Zhang, Xiaoping, Bleickardt, Carina J., Scott, Jack D., Miller, Michael W., Stamford, Andrew W., Parker, Eric M., Varty, Geoffrey B.
Publikováno v:
In European Journal of Pharmacology 5 May 2014 730:157-163
Autor:
Mullins, Deborra, Adham, Nika, Hesk, David, Wu, Yusheng, Kelly, Joseph, Huang, Ying, Guzzi, Mario, Zhang, Xiaoping, McCombie, Stuart, Stamford, Andrew, Parker, Eric
Publikováno v:
In European Journal of Pharmacology 2008 601(1):1-7
Autor:
Parker, Eric M *, Balasubramaniam, Ambikaipakan, Guzzi, Mario, Mullins, Deborra E, Salisbury, Brian G, Sheriff, Sulaiman, Witten, Melanie B, Hwa, Joyce J
Publikováno v:
In Peptides 2000 21(3):393-399
Publikováno v:
In European Journal of Pharmacology 2000 395(2):87-93
Autor:
DE CESARI, SEBASTIANO, GIORGIONI, ANNA, VITIELLO, ELISA, GRILLI, EMANUELE ENRICO, GUZZI, MARIO, PEZZOLI, FABIO
Germanium is a prominent candidate for the development of semiconductor spintronics. It is compatible with Silicon microelectronic processing and it has quasi-direct behavior. These latter properties result in direct-gap transitions wich leads to eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::62dbfb5dbd982648af1da7b46817d60a
http://hdl.handle.net/10281/87908
http://hdl.handle.net/10281/87908
Autor:
Pavesi, Lorenzo, Guzzi, Mario
Publikováno v:
Journal of Applied Physics; 5/15/1994, Vol. 75 Issue 10, p4779, 64p, 21 Charts, 66 Graphs
Autor:
GIORGIONI, ANNA, GRILLI, EMANUELE ENRICO, BONERA, EMILIANO, GUZZI, MARIO, PEZZOLI, FABIO, VITIELLO, ELISA
The polarization of the photoluminescence (PL) from the indirect gap of bulk Ge is studied after optical orientation by absorption of circularly polarized light through the direct gap. The spin relaxation time ts is then estimated by combining the po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::db61fd2de458beb61a430ba36f96d017
http://hdl.handle.net/10281/65461
http://hdl.handle.net/10281/65461
Autor:
MIGLIO, LEONIDA, BERGAMASCHINI, ROBERTO, BIETTI, SERGIO, BONERA, EMILIANO, GRILLI, EMANUELE ENRICO, GUZZI, MARIO, MARZEGALLI, ANNA, MONTALENTI, FRANCESCO CIMBRO MATTIA, PEZZOLI, FABIO, SALVALAGLIO, MARCO, SANGUINETTI, STEFANO, SCACCABAROZZI, ANDREA, Falub, CV, Isa, F, Kreiliger, T, Taboada, AG, Chrastina, D, Frigerio, I, Isella, G, Meduna, M, Wewior, L, Fuster, D, Alen, B, Bollani, M, Dommann, A, Neels, A, Niedermann, P, Frigeri, C, Fompeyrine, J, Richter, M, Uccelli, E, Mancarella, F, von Kanel, H.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::455617770a63498fc853576b80abb2c3
http://hdl.handle.net/10281/71231
http://hdl.handle.net/10281/71231
Autor:
PEZZOLI, FABIO, GIORGIONI, ANNA, GRILLI, EMANUELE ENRICO, GUZZI, MARIO, Qing, L, Isella, G, Dery H.
Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Noticeably, the quasi-direct band struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::52d37aed0a542dfe25fae54d46038a7c
http://hdl.handle.net/10281/87872
http://hdl.handle.net/10281/87872