Zobrazeno 1 - 10
of 24
pro vyhledávání: '"GRILLI, EMANUELE ENRICO"'
Autor:
VITIELLO, ELISA, GIORGIONI, ANNA, PALEARI, STEFANO, GRILLI, EMANUELE ENRICO, FANCIULLI, MARCO, PEZZOLI, FABIO, Cecchi, S, Isella, G, Jantsch, W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::ca24a312ae046102b903559e5898a2c6
http://hdl.handle.net/10281/159203
http://hdl.handle.net/10281/159203
Autor:
PEZZOLI, FABIO, GIORGIONI, ANNA, GATTI, ELEONORA, GRILLI, EMANUELE ENRICO, MIGLIO, LEONIDA, Gallacher, K, Isa, F, Biagioni, P, Millar, R.W., Isella, G, Paul, DJ
Silicon offers a compelling platform for developing hybrid architectures that exploit novel functionalities. Heteroepitaxial growth of Ge on Si is a prominent approach to tailor material properties to achieve this goal. However, designing Ge-based he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::e43c7fe2eb1e14faee6bd7f1382fb5ec
http://hdl.handle.net/10281/128891
http://hdl.handle.net/10281/128891
Autor:
VITIELLO, ELISA, GIORGIONI, ANNA, GATTI, ELEONORA, DE CESARI, SEBASTIANO, BONERA, EMILIANO, GRILLI, EMANUELE ENRICO, PEZZOLI, FABIO, Virgilio, M, Frigerio, J, Isella, G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::10bded8b22b60c688ea09f35dd1de629
http://hdl.handle.net/10281/129771
http://hdl.handle.net/10281/129771
Autor:
PALEARI, STEFANO, GIORGIONI, ANNA, GRILLI, EMANUELE ENRICO, PEZZOLI, FABIO, FANCIULLI, MARCO, Cecchi, S, Isella, G, Jantsch, W
Germanium has been under the spotlight of researchers for several decades and it has been studied both from the theoretical and experi- mental point of view. Its characteristic conduction band, with four minima at the edges of the Brillouin zone, is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::430bff698abeab07ecaf7c7ee7962ab0
http://hdl.handle.net/10281/138375
http://hdl.handle.net/10281/138375
Autor:
GIORGIONI, ANNA, PALEARI, STEFANO, GRILLI, EMANUELE ENRICO, FANCIULLI, MARCO, PEZZOLI, FABIO, Cecchi, S, Golub, L, Isella, G, Jantsch, W
The ability of tailoring the Landé g-factor in semiconductors is appealing because it is related to the possibility of tuning the spin-orbit interaction in the solid state and ultimately to control the spin-dependent properties via external fields i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::fee217d6145974f29d35f04a23718d53
http://hdl.handle.net/10281/112069
http://hdl.handle.net/10281/112069
Autor:
VITIELLO, ELISA, GIORGIONI, ANNA, DE CESARI, SEBASTIANO, GRILLI, EMANUELE ENRICO, PEZZOLI, FABIO, Frigerio, J, Gatti, E, Isella, G
Ge films can be epitaxially grown on Si substrates, introducing biaxial tensile strain. This opens up applications of Ge in photonic [1], as strain contributes to enhance direct-gap emission, eventually yielding lasing action at room temperature. Not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::b07fc6930b0dac9ef802060a7d58a08c
http://hdl.handle.net/10281/87354
http://hdl.handle.net/10281/87354
Autor:
DE CESARI, SEBASTIANO, GIORGIONI, ANNA, VITIELLO, ELISA, GRILLI, EMANUELE ENRICO, GUZZI, MARIO, PEZZOLI, FABIO
Germanium is a prominent candidate for the development of semiconductor spintronics. It is compatible with Silicon microelectronic processing and it has quasi-direct behavior. These latter properties result in direct-gap transitions wich leads to eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::62dbfb5dbd982648af1da7b46817d60a
http://hdl.handle.net/10281/87908
http://hdl.handle.net/10281/87908
Autor:
GIORGIONI, ANNA, PALEARI, STEFANO, GRILLI, EMANUELE ENRICO, FANCIULLI, MARCO, PEZZOLI, FABIO, Cecchi, S., Isella, G., Jantsch, W.
The ability of tailoring the value of the Landé g factor in semiconductors is appealing because it is related to the possibility of tuning the spin-orbit interaction in the solid state and ultimately to control the spin-dependent properties via exte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::a53ad9dc00ef86bc72d20a1631c348b3
http://hdl.handle.net/10281/87904
http://hdl.handle.net/10281/87904
Autor:
GIORGIONI, ANNA, GRILLI, EMANUELE ENRICO, BONERA, EMILIANO, GUZZI, MARIO, PEZZOLI, FABIO, VITIELLO, ELISA
The polarization of the photoluminescence (PL) from the indirect gap of bulk Ge is studied after optical orientation by absorption of circularly polarized light through the direct gap. The spin relaxation time ts is then estimated by combining the po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::db61fd2de458beb61a430ba36f96d017
http://hdl.handle.net/10281/65461
http://hdl.handle.net/10281/65461