Výsledky vyhledávání - "GREGORKIEWICZ, TOM"

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Bandgap renormalization in monolayer MoS_2 on CsPbBr_3 quantum dot via charge transfer at room temperature

Autor: Adhikari, Subash, Kim, Ji-Hee, Song, Bumsub, Doan, Manh-Ha, Tran, Minh Dao, Gomez, Leyre, Kim, Hyun, Gul, Hamza Zad, Ghimire, Ganesh, Yun, Seok Joon, Gregorkiewicz, Tom, Lee, Young Hee

Many-body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to shrink the intrinsic bandgap, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin-orbit splitting.

Externí odkaz: http://arxiv.org/abs/2010.14015

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Highly Efficient Carrier Multiplication in van der Waals layered Materials

Autor: Kim, Ji-Hee, Bergren, Matthew R., Park, Jin Cheol, Adhikari, Subash, Lorke, Michael, Fraunheim, Thomas, Choe, Duk-Hyun, Kim, Beom, Choi, Hyunyong, Gregorkiewicz, Tom, Lee, Young Hee

Carrier multiplication (CM), a photo-physical process to generate multiple electron-hole pairs by exploiting excess energy of free carriers, is explored for efficient photovoltaic conversion of photons from the blue solar band, predominantly wasted a

Externí odkaz: http://arxiv.org/abs/1801.01675

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Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both

Autor: Capretti, Antonio, Lesage, Arnon, Gregorkiewicz, Tom

Nanoscale dielectric resonators and quantum-confined semiconductors have enabled unprecedented control over light absorption and excited charges, respectively. In this work, we embed luminescent silicon nanocrystals (Si-NCs) into a 2D array of SiO2 n

Externí odkaz: http://arxiv.org/abs/1703.10074

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