Zobrazeno 1 - 10
of 11
pro vyhledávání: '"GJ Gijs Meeusen"'
Autor:
Z Zhou Qing, Rfg Ralph Meulenbroeks, van de Mcm Richard Sanden, R.P. Dahiya, DC Daan Schram, Gheorghe Dinescu, GJ Gijs Meeusen
Publikováno v:
Plasma Sources Science and Technology. 3:521-527
A high-density expanding recombining plasma is investigated for deposition of a-Si:H thin films. The deposition method allows high growth rates and it relies on separation of plasma production in a high-pressure thermal arc, and transport of fragment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81853befb1fc223c0742a71a6dbad9d2
https://doi.org/10.1088/0963-0252/3/4/009
https://doi.org/10.1088/0963-0252/3/4/009
Publikováno v:
Journal of Nuclear Materials, 200(3), 430-433. Elsevier
A new plasma deposition technique is described. In this method a high density and strongly flowing argon plasma is admixed with monomers such as CH/sub 4/, C/sub 2/H/sub 2/, SiH/sub 4/, etc. Through effective charge transfer and dissociative recombin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fb1bf5e6b92ade08864993d7852d784
https://doi.org/10.1016/0022-3115(93)90322-p
https://doi.org/10.1016/0022-3115(93)90322-p
Autor:
DC Daan Schram, GJ Gijs Meeusen, van de Mcm Richard Sanden, Rfg Ralph Meulenbroeks, EA Ershov-Pavlov
Publikováno v:
Journal of Applied Physics. 71:4156-4163
Results from emission spectroscopy measurements on an Ar/SiH4 plasma jet which is used for fast deposition of amorphous hydrogenated silicon are presented. The jet is produced by allowing a thermal cascaded arc plasma in argon (I=60 A, V=80 V, Ar flo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98edc3b10f8d2ccda56f1445d571b92e
https://doi.org/10.1063/1.350850
https://doi.org/10.1063/1.350850
Autor:
Atm Wilbers, DC Daan Schram, M Marco Haverlag, Gmw Gerrit Kroesen, Holger Kersten, GJ Gijs Meeusen
Publikováno v:
Thin Solid Films. 204:59-75
We have produced amorphous hydrogenated silicon (a-Si:H) films from silane with an unconventional deposition technique, a supersonically expanding d.c. arc plasma. The deposited films are analysed mainly by using spectroscopic IR ellipsometry. Furthe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d5aad10e8ce12691cb17317ec4b526a
https://doi.org/10.1016/0040-6090(91)90494-i
https://doi.org/10.1016/0040-6090(91)90494-i
Publikováno v:
Journal of Physics D: Applied Physics, 24(3), 261-267. Institute of Physics
Experiments to study negative ion densities in a radio-frequency CF4 plasma have been carried out using a photodetachment technique. Electrons are photodetached from the negative ions using the pulse of a Nd-YAG laser at the tripled (355 nm) or the q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22111ebfa817c3b8edb63c46d2ddd72f
https://doi.org/10.1088/0022-3727/24/3/006
https://doi.org/10.1088/0022-3727/24/3/006
Publikováno v:
Contributions to Plasma Physics. 31:27-42
A supersonically expanding arc plasma in argon is analyzed both experimentally and theoretically. The plasma is created in a cascaded arc and extracted through a hole in the anode. It emanates in a large vacuum system, where it expands supersonically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::248377d111dfb96dc1063ff2de9050ad
https://doi.org/10.1002/ctpp.2150310105
https://doi.org/10.1002/ctpp.2150310105
Autor:
JJ Beulens, CJ Timmermans, Atm Wilbers, Thj Bisschops, Gmw Gerrit Kroesen, Ajm Buuron, GJ Gijs Meeusen, Abm Bertus Husken, L A Bisschops, DC Daan Schram
Publikováno v:
Le Journal de Physique Colloques. 51:C5-361
By separating plasma production and plasma deposition and by taking advantage of the high specific ionizing power of thermal plasmas, very high deposition rates on large areas of amorphous C-H and Si-H are obtained. The layers have been analyzed by s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5afeaef3b796a31098002183f794b497
https://doi.org/10.1051/jphyscol:1990543
https://doi.org/10.1051/jphyscol:1990543
Autor:
M.C.M. van de Sanden, W.F. van Ooij, S. Qian, DC Daan Schram, J.W.A.M. Gielen, Ajm Buuron, GJ Gijs Meeusen
Publikováno v:
International Conference on Plasma Sciences (ICOPS).
Summary form only given. A fast deposition method, utilizing a thermal plasma which expands into a vacuum vessel, has been used to deposit amorphous hydrogenated silicon and carbon layers (a-Si:H and a-C:H, respectively). The deposited layers are pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79694287f82c25fb65ff668c07aa392c
https://doi.org/10.1109/plasma.1993.593612
https://doi.org/10.1109/plasma.1993.593612
Autor:
Ajm Buuron, GJ Gijs Meeusen, R. F. G. Meulenbroeks, D.A. Benoy, M.C.M. van de Sanden, Z Zhou Qing, M.J. de Graaf, DC Daan Schram, J.J.A.M. van der Mullen, F.H.A.G. Fey, JJ Beulens, J.M. De Regt
Publikováno v:
Microwave Discharges ISBN: 9781489911322
In plasma processing commonly a distinction is made between low pressure (or low (ion) temperature) plasmas and thermal plasmas1. The transition between these two classes is gradual. Plasmas cover a wide spectrum in electron density (1015/m3–1023/m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dcd65aa70a0683768eb2a393172507b
https://doi.org/10.1007/978-1-4899-1130-8_16
https://doi.org/10.1007/978-1-4899-1130-8_16
Autor:
G Gheorghe Dinescu, DC Daan Schram, JJ Beulens, de Jm Hans Regt, de Mj Mark Graaf, Z Zhou Qing, van de Mcm Richard Sanden, Rfg Ralph Meulenbroeks, Ajm Buuron, GJ Gijs Meeusen, DK Otorbaev
Publikováno v:
Microwave Discharges ISBN: 9781489911322
Nowadays high electron density plasmas are, beside their fundamental interest, widely used for many applications, e.g., light sources and plasma processing. The well known examples of high electron density plasmas can be found among the class of ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8d51d26465d8aa92a711ba0fa90bc14
https://doi.org/10.1007/978-1-4899-1130-8_18
https://doi.org/10.1007/978-1-4899-1130-8_18