Zobrazeno 1 - 10
of 268
pro vyhledávání: '"GHATAK, J."'
In the present work, we investigate the formation of nano tracks by cluster and mono-atomic ion beams in the fullerene (C60) thin films by High Resolution Transmission Electron Microscopy (HRTEM). The fullerene films on carbon coated grids were irrad
Externí odkaz:
http://arxiv.org/abs/1402.0191
Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution cross-sectional tra
Externí odkaz:
http://arxiv.org/abs/1110.4242
Clean Si(111)-(7{x7) surfaces, followed by air-exposure, have been investigated by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of short range (7
Externí odkaz:
http://arxiv.org/abs/1009.2633
Autor:
Ghatak, J., Satyam, P. V.
We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au2+ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6x10^13, 1x10^14 and 5x10^14 ions cm-2 at a high be
Externí odkaz:
http://arxiv.org/abs/0808.0448
We discuss four important aspects of 1.5 MeV Au2+ ion-induced flux dependent sputtering from gold nanostrcutures (of an average size 7.6 nm and height 6.9 nm) that are deposited on silicon substrates: (a) Au sputtering yield at the ion flux of 6.3x10
Externí odkaz:
http://arxiv.org/abs/0806.3162
Enhanced diffusion of gold atoms into silicon substrate has been studied in Au thin films of various thicknesses (2.0, 5.3, 10.9 and 27.5 nm) deposited on Si(111) and followed by irradiation with 1.5 MeV Au2+ at a flux of 6.3x10^12 ions cm-2 s-1 and
Externí odkaz:
http://arxiv.org/abs/0805.3965
Autor:
Ghatak, J., Bhatta, M. Umananda, Sundaravel, B., Nair, K. G. M., Liou, Sz-Chian, Chen, Cheng-Hsuan, Wang, Yuh-Lin, Satyam, P. V.
We report a direct observation of dramatic mass transport due to 1.5 MeV Au2+ ion impact on isolated Au nanostructures of an average size 7.6 nm and a height 6.9 nm that are deposited on Si (111) substrate under high flux (3.2x10^10 to 6.3x10^12 ions
Externí odkaz:
http://arxiv.org/abs/0803.3495
Publikováno v:
Phys Rev Lett 100, 245501 (2008)
Two exponents, $\delta$, for size distribution of $n$-atom clusters, $Y(n)\sim n^{-\delta}$, have been found in Au clusters sputtered from embedded Au nanoparticles under swift heavy ion irradiation. For small clusters, below 12.5 nm in size, $\delta
Externí odkaz:
http://arxiv.org/abs/0802.2494
Nanoisland gold films, deposited by vacuum evaporation of gold onto Si(100) substrates, were irradiated with 1.5 MeV Au$^{2+}$ ions up to a fluence of $5\times 10^{14}$ ions cm$^{-2}$ and at incidence angles up to $60^{\circ}$ with respect to the sur
Externí odkaz:
http://arxiv.org/abs/cond-mat/0503430
Strain at surfaces and interfaces play an important role in the optical and electronic properties of materials. MeV ion-induced strain determination in single crystal silicon substrates and in Ag (nanoisland)/Si(111) at surface and interfaces has bee
Externí odkaz:
http://arxiv.org/abs/cond-mat/0503091