Výsledky vyhledávání - "GATILOVA, L."

Development Status of Millimeter Wave GaN Schottky Doublers above W-band for the Implementation of European Terahertz Sources for Astronomy and Astrophysics

Autor: Mondal, P., D. Gioia, G., Bouillaud, H., Roelens, Yannick, Vacelet, T., Gatilova, L., Ducournau, Guillaume, Zegaoui, M., Zaknoune, M., Treuttel, J.

Publikováno v: Nano, Meso, Micro: Science and Innovation for Radio and Photonic, URSI JS22
Nano, Meso, Micro: Science and Innovation for Radio and Photonic, URSI JS22, Mar 2022, Palaiseau, France. pp.87-96

International audience; In this report we present the effort to develop high power handling and efficiency GaN-based frequency doublers required to build a 1 THz local oscillator source for instrumentation in astronomy and astrophysics. The design st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::172e08d35cb27bf97c7a2fb34d2c300b
https://hal.science/hal-03835088

Zobrazit plný text záznamu

Global Model of Cl(2)/Ar High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP

Autor: Chanson, R., Rhallabi, A., C. Fernandez, M., Cardinaud, Christophe, Bouchoule, S., GATILOVA, L., Talneau, A.

Publikováno v: IEEE Transactions on Plasma Science
IEEE Transactions on Plasma Science, Institute of Electrical and Electronics Engineers, 2012, 40 (4), pp.959. ⟨10.1109/TPS.2012.2183391⟩

International audience; A multiscale approach has been developed in order to simulate the etch process of InP in an inductive coupled plasma (ICP) Cl2/Ar plasma discharge. The model consists of three modules: a global kinetic model of the Cl2/Ar plas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::eb64daf8294527c67fddffa0086711ea
https://hal.archives-ouvertes.fr/hal-00865047

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání