Zobrazeno 1 - 10
of 3 007
pro vyhledávání: '"GAA"'
Autor:
Moein Mir, Kianmehr Rouhani, Kiana Rouhani, Mohammadjavad Hassani, Mohammadrafi Damirchi, Sajjad Yazdansetad, Mehrdad Aghaei
Publikováno v:
Journal of Medical Case Reports, Vol 18, Iss 1, Pp 1-7 (2024)
Abstract Background Pompe disease, a rare autosomal recessive disorder, is caused by mutations in the acid α-glucosidase gene. Pompe disease is a congenital metabolic disorder that affects all organs, particularly the striated muscle and nerve cells
Externí odkaz:
https://doaj.org/article/3b6eac6f02f74cc9b98bf556317d42b1
Autor:
Jyi-Tsong Lin, Wei-Heng Tai
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-20 (2024)
Abstract In this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel. The overlapping gate and source contact regio
Externí odkaz:
https://doaj.org/article/cba3c7112606408cbc1aad648e6e763a
Autor:
Sandra Milena Castellar-Leones, Fernando Ortiz-Corredor, Daniel Manrique-Hernández, Diana Sánchez-Peñarete, Edicson Ruiz-Ospina, Diana Soto-Peña, Cristian Correa-Arrieta
Publikováno v:
Journal of Medical Case Reports, Vol 18, Iss 1, Pp 1-5 (2024)
Abstract Background Pompe disease, a rare autosomal recessive disorder caused by acid alpha-glucosidase deficiency, results in progressive glycogen accumulation and multisystem dysfunction. Enzyme replacement therapy with recombinant human acid alpha
Externí odkaz:
https://doaj.org/article/dea8e376910644618a67679fbc33812e
Autor:
Hakkee Jung
Publikováno v:
AIMS Electronics and Electrical Engineering, Vol 8, Iss 2, Pp 211-216 (2024)
An analytical subthreshold swing (SS) model has been presented to determine the SS of an elliptic junctionless gate-all-around field-effect transistor (GAA FET). The analysis of a GAA FET with an elliptic cross-section is essential because it is diff
Externí odkaz:
https://doaj.org/article/02a2c1cdc1994aadb8f3cb3d2ac66172
Autor:
Hima Bindu Valiveti, Indr Jeet Rajput, N. Udaya Kumar, Harsh Lohiya, R. Sri Uma Suseela, Atul Singla, Saurabh Rajvanshi
Publikováno v:
Cogent Engineering, Vol 11, Iss 1 (2024)
When developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm). These nm-sized cha
Externí odkaz:
https://doaj.org/article/e98e4e1ce6294f4790a7303cc1deee49
Autor:
Valentina Martinez‐Montoya, Luz María Sánchez‐Sánchez, Roberto Sandoval‐Pacheco, Diana Mónica Anaya Castro, Carmen Araceli Arellano‐Valdez, Carmen Amor Ávila‐Rejón, Pedro Alejandro Aguilar‐Juárez, Martín Espino‐Pluma, Cruz Antonio González‐Santillanes, Rosa Isela Martínez‐Segovia, Dorian Olmos‐Morfin, Ofelia Padilla‐De laTorre, Ishar Solís‐Sánchez, Mónica Vázquez‐Del Mercado Espinosa, Camilo Ernesto Villarroel‐Cortés, Jesús Salvador Velarde‐Félix, Jaime López‐Valdez, Julio Olaiz‐Urbina, Edgar Ricárdez‐Marcial, Imelda Vergara‐Sánchez, Pablo Radillo‐Díaz, Ekaterina Kazakova, Beatriz De la Fuente‐Cortez, Luz delCarmen Marquez‐Quiróz, Benjamín Torres‐Octavo, Rubicel Diaz‐Martinez
Publikováno v:
Molecular Genetics & Genomic Medicine, Vol 12, Iss 7, Pp n/a-n/a (2024)
Abstract Background Pompe Disease (PD) is a metabolic myopathy caused by variants in the GAA gene, resulting in deficient enzymatic activity. We aimed to characterize the clinical features and related genetic variants in a series of Mexican patients.
Externí odkaz:
https://doaj.org/article/10c85aa27eff45718f043839c276dd00
Autor:
Yongqiang Zhang, Nazarii Boichuk, Denys Pustovyi, Valeriia Chekubasheva, Hanlin Long, Mykhailo Petrychuk, Svetlana Vitusevich
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 7, Pp n/a-n/a (2024)
Abstract High‐quality liquid gate‐all‐around (LGAA) silicon nanowire (NW) field‐effect transistor (FET) biosensors are fabricated and studied their properties in 1 mm phosphate‐buffered saline solution with pH = 7.4 using transport and nois
Externí odkaz:
https://doaj.org/article/8faa48244ed34deeb01d2bc8e8d40258
Autor:
Riwei Ouyang, Linlin Wan, David Pellerin, Zhe Long, Jian Hu, Qian Jiang, Chunrong Wang, Linliu Peng, Huirong Peng, Lang He, Rong Qiu, Junling Wang, Jifeng Guo, Lu Shen, Bernard Brais, Matt C. Danzi, Stephan Zuchner, Beisha Tang, Zhao Chen, Hong Jiang
Publikováno v:
EBioMedicine, Vol 102, Iss , Pp 105077- (2024)
Summary: Background: An intronic GAA repeat expansion in FGF14 was recently identified as a cause of GAA-FGF14 ataxia. We aimed to characterise the frequency and phenotypic profile of GAA-FGF14 ataxia in a large Chinese ataxia cohort. Methods: A tota
Externí odkaz:
https://doaj.org/article/86b04fea61334ffe80f3605964adc1ba
Autor:
Hyeong-Chan Son, Hyunwoo Kim
Publikováno v:
IEEE Access, Vol 12, Pp 145393-145399 (2024)
In this study, single-event transient (SET) characteristics in tunneling-based ternary complementary MOS device (T-CMOS) with gate-all-around structure (i.e., nanosheet FET) were analyzed for the first time. For low power computing systems, the trans
Externí odkaz:
https://doaj.org/article/11fb6963d4c64a0a989683d2ae32b1e7
Autor:
Minji Bang, Jonghyeon Ha, Minki Suh, Dabok Lee, Minsang Ryu, Jin-Woo Han, Hyunchul Sagong, Hojoon Lee, Jungsik Kim
Publikováno v:
IEEE Access, Vol 12, Pp 130347-130355 (2024)
The effects of single event upset (SEU) by alpha particles and heavy ions on the data flip of a 3 nm technology node gate-all-around (GAA) nanosheet field-effect transistor (NSFET) 6T static random-access memory (SRAM) cell was studied through techno
Externí odkaz:
https://doaj.org/article/c729c86dcf4b40dd8aafed6967dcc577