Zobrazeno 1 - 10
of 160
pro vyhledávání: '"G.W. Neudeck"'
Publikováno v:
IEEE Photonics Technology Letters. 11:1647-1649
We report a resonant cavity Si photodiode grown by merged epitaxial lateral overgrowth. At a reverse bias of 5 V, the dark current was 2.7 pA and the bandwidth exceeded 34 GHz. The peak quantum efficiencies ranged from 42% at 704 nm to 31% at 836 nm.
Autor:
G.W. Neudeck
Publikováno v:
IEEE Circuits and Devices Magazine. 6:32-38
The advantages of CMOS technology are examined, and problems of and approaches to 3-D integration are discussed. Particular attention is given to silicon-on-insulator (SOI) technology and the use of selective epitaxial growth (SEG) and epitaxial late
Publikováno v:
IEEE Photonics Technology Letters. 10:129-131
An novel resonant-cavity Si photodiode was fabricated using a selective epitaxial growth process. The photodiode shows a bandwidth over 5 GHz, and a quantum efficiency over 65% at 700 nm. Compared to the previously reported Si resonant-cavity Si phot
Publikováno v:
IEEE SOS/SOI Technology Conference.
Summary form only given. A dual-gate CMOS process with excellent device performance is discussed. The low parasitics of SOI devices can be obtained without the penalty of degraded channel mobility that is often observed in zone melting recrystallized
Publikováno v:
International Technical Digest on Electron Devices Meeting.
Summary form only given. An inherently crystalline monolithic three-dimensional CMOS process was developed. A stacked inverter was built with the footprint of a single transistor. The PMOS transconductance was raised by full-depletion and dual-gate c
Publikováno v:
1996 IEEE International SOI Conference Proceedings.
To achieve faster circuits with increased circuit density and reduced power, fully depleted (FD) dual-gated (DG) thin-film SOI-MOSFETs with an isolated buried backgate have been fabricated by using epitaxial lateral overgrowth (ELO) into SOI islands.
Autor:
C.K. Subramanian, G.W. Neudeck
Publikováno v:
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
A novel single crystal silicon contacted double self-aligned transistor (DST) structure, that uses vertical seed epitaxial lateral overgrowth (VELO) is demonstrated. When scaled to smaller dimensions, this structure can provide an 18% improvement in
Autor:
G.W. Neudeck, C.K. Subramanian
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
A SOI (silicon-on-insulator) process using ELO (epitaxial lateral overgrowth) is presented that can be used not only to create local area SOI islands but full wafer SOI as well. A thin full-wafer SOI structure formed with merged ELO has been demonstr
Publikováno v:
Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243).
Summary form only given. We report on a resonant cavity enhanced (RCE) Si photodiode grown by epitaxial lateral overgrowth that has achieved a bandwidth of 27 GHz and a peak efficiency of 54%. This is the highest speed reported for a Si PIN photodiod
Publikováno v:
Twenty Third IEEE/CPMT International Electronics Manufacturing Technology Symposium (Cat. No.98CH36205).
This paper evaluates the manufacturing benefits of silicon selective epitaxial growth (SEG) as a front-end device isolation fabrication process. The technology is evaluated in two different ways. First, the cost of ownership (COO) of the equipment is