Zobrazeno 1 - 10
of 65
pro vyhledávání: '"G.W. Blackmore"'
Publikováno v:
Materials Science and Engineering: B. 16:186-190
The diffusion of Ga into bulk-grown, single crystal slices of CdTe was studied in the temperature range 350-811 o C where the diffusion anneals were carried out in sealed silica capsules using three different types of diffusion sources. These were: e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18a99c3d5aa131ab9dd41b57a3f241f6
https://doi.org/10.1016/0921-5107(93)90040-t
https://doi.org/10.1016/0921-5107(93)90040-t
Publikováno v:
Surface and Interface Analysis. 20:69-76
A quantitative analysis of the effect that the surface roughening due to oxygen ion bombardment has on the depth resolution of SIMS profiles has been carried out for the semiconductor alloys AlxGa1−xAs (x = 0, 0.175, 0.384 and 0.69) for a range of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71a1932bfdba8ae69f4b70bfa8263b3a
https://doi.org/10.1002/sia.740200111
https://doi.org/10.1002/sia.740200111
Publikováno v:
Journal of Crystal Growth. 117:213-217
The use of powdered HgTe as a source of mercury in a graphite sliding boat used for liquid phase epitaxial (LPE) growth of CdxHg1−xTe alloys from Te-rich solutions at 460°C has been found to give excellent reproducibility of alloy composition, x a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43dd0e42efa476df8c2f0523e55d64fa
https://doi.org/10.1016/0022-0248(92)90747-7
https://doi.org/10.1016/0022-0248(92)90747-7
Publikováno v:
Journal of Crystal Growth. 108:549-553
The abruptness of interfaces between liquid phase epitaxial grown layers of CdxHg1 - xTe and the CdTe(111) substrates on which they are grown has been studied by four techniques used for compositional profiling. These are: (i) energy-dispersive elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aaaa5647bc12d3df8ae8f5bcb8dd73e
https://doi.org/10.1016/0022-0248(91)90233-u
https://doi.org/10.1016/0022-0248(91)90233-u
Publikováno v:
Thin Solid Films. 192:321-334
The initial growth of ZnS thin films deposited by r.f. sputtering onto cadmium stannate substrates has been traced, showing how a chemical interface approximately 100 A wide is developed. Although graded in composition across this width, the interfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e76fefbffe09ba9f6cb25cad3d36b6ab
https://doi.org/10.1016/0040-6090(90)90076-p
https://doi.org/10.1016/0040-6090(90)90076-p
Publikováno v:
Thin Solid Films. 192:309-319
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5afa7859a1742819301d9a531e6f6cbc
https://doi.org/10.1016/0040-6090(90)90075-o
https://doi.org/10.1016/0040-6090(90)90075-o
Publikováno v:
Journal of Crystal Growth. 106:127-138
The roles of various analytical techniques for both matrix element composition and impurity content of cadmium mercury telluride and related materials are reviewed from the viewpoint of a user. The main techniques considered are infrared (IR) transmi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7892cf857227a1dd8d4896cbba43ffef
https://doi.org/10.1016/0022-0248(90)90294-u
https://doi.org/10.1016/0022-0248(90)90294-u
Publikováno v:
Surface and Interface Analysis. 15:617-620
Secondary ion mass spectrometry (SIMS) requires the preparation and measurement of standard samples in order to be considered a quantitative technique. This normally can be achieved by the production of ion-implanted specimens in the matrix to be stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5e2da29a9539d1bdf40dd8937a14e23
https://doi.org/10.1002/sia.740151009
https://doi.org/10.1002/sia.740151009
Autor:
S. J. Barnett, Janet E. Hails, Stuart J. C. Irvine, J. B. Mullin, G.W. Blackmore, O. D. Dosser, H. Hill
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1059-1066
The enhancement of growth rate of epitaxial CdTe on GaAs(100)2°→(110) substrates is investigated. Photolytic decomposition of the precursors dimethylcadmium with either dimethyl telluride or diethyl telluride is brought about by absorption of 257
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63401c7a9ca6200d250f1b959b399f80
https://doi.org/10.1116/1.576962
https://doi.org/10.1116/1.576962
Publikováno v:
Journal of Crystal Growth. 100:275-278
Diffusion of arsenic in Cd 0.18 Hg 0.82 Te grown by liquid phase epitaxy (LPE) has been studied for the first time using both radiotracer and secondary ion mass spectrometry (SIMS) techniques. Samples were diffused at 400°C under equilibrium mercury
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::400094e6491155800d555e44b9e557a8
https://doi.org/10.1016/0022-0248(90)90632-u
https://doi.org/10.1016/0022-0248(90)90632-u