Zobrazeno 1 - 10
of 74
pro vyhledávání: '"G.W. Ba̧k"'
Publikováno v:
Journal of Molecular Structure: THEOCHEM. 619:59-67
The ab initio quantum-chemical calculations were used to obtain the components of the dipole moment of four molecules composed of a rigid central segment and two symmetric flexible endings. The recently synthesized molecules are of interest due to th
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. 8:555-558
Results are presented of detection of thermal aging in the chitosan/ketoprofen acid (KTA) system, using low-frequency dielectric spectroscopy. Aging leads to substantial changes of the low frequency dielectric properties of the system. In order to id
Autor:
A. Lipiński, G.W. Ba̧k
Publikováno v:
Thin Solid Films. 151:289-295
The dielectric properties of large-grained and small-grained p-terphenyl layers are reported. The dielectric responses of the two kinds of p-terphenyl polycrystalline structures differed significantly. The dielectric losses of the small-grained layer
Autor:
G.W Ba̧k
Publikováno v:
Thin Solid Films. 103:319-322
A.c. conduction in p-quaterphenyl layers in the ON state was investigated. It was found that the activation energy of the a.c. conduction in samples in the ON state is independent of the frequency and equal to 0 eV, in contrast with the activation en
Autor:
G.W. Ba̧k
Publikováno v:
Thin Solid Films. 105:177-181
It has been found that the drift velocity of carriers in polycrystalline layers of simple aromatic hydrocarbons increases proportionally to the electric field and saturates at a field of 2×106Vm−>1. In addition it has been inferred that the predom
Autor:
G.W. Ba̧k
Publikováno v:
Thin Solid Films. 105:183-186
The change in the average distance between the localized states at the Fermi level, which form hopping paths, was calculated as a function of the electric field. The results of the calculations were used to obtain the dependence of the carrier drift
Autor:
G.W. Ba̧k
Publikováno v:
Thin Solid Films. 146:L1-L6
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Autor:
G.W. Bak
Publikováno v:
Materials Science and Engineering. 80:L37-L39
The low frequency dielectric properties of p -terphenyl crystals and polycrystalline layers are presented. The relaxation loss peak is ascribed to a trapping level 1.04 × 10 −19 J (0.65 eV) deep. The results are interpreted by means of the many-bo
Akademický článek
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