Zobrazeno 1 - 10
of 66
pro vyhledávání: '"G.S. Pekar"'
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 2, Pp 173-179 (2018)
It has been experimentally shown that transmission and scattering of IR radiation by Na-doped соarse-grained large germanium plates are the same as of Ge:Na single crystals and exceeds the parameters in the commonly used optical germanium Ge:Sb gro
Externí odkaz:
https://doaj.org/article/347d9ead8420423e8c4b60ec15bf1797
Autor:
G.S. Pekar
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 19, Iss 1, Pp 23-27 (2016)
A method for express automatic evaluation of the dislocation density on the crystal surfaces has been developed. The work involves creation of a software that allows automatical determining the number of etch pits with a defined geometric shape, whic
Externí odkaz:
https://doaj.org/article/53ce0e3bc0dc46a4bd314ce95da7664d
Publikováno v:
Materials Chemistry and Physics. 276:125329
In this paper we investigate the doping effect of FeO and Fe2 O3 on the structural, optical and magnetic properties of ZnO layers prepared by a new stencil-free technique. Samples were characterized by X-ray diffraction (XRD), atom force and magnetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05784260999ad415c61ef68edbac8770
https://doi.org/10.1016/j.matchemphys.2021.125329
https://doi.org/10.1016/j.matchemphys.2021.125329
Autor:
S. A. Iliash, Serhiy Kondratenko, G.S. Pekar, Andrii Nikolenko, V. P. Kladko, V. S. Lysenko, O.S. Kondratenko, V. V. Strelchuk, O. Yo. Gudymenko, Yu. N. Kozyrev
Publikováno v:
Thin Solid Films. 654:54-60
Optical properties and morphology of thin films with Ge and SiGe nanocrystallites are studied by using the methods of Raman scattering, multi-angle ellipsometry, and X-ray measurements. Our observations showed that low-temperature Ge epitaxy on Si(00
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::742c8cecfe7a37f7d7d6002c82d333d4
https://doi.org/10.1016/j.tsf.2018.03.089
https://doi.org/10.1016/j.tsf.2018.03.089
Autor:
G.S. Pekar, A.F. Singaеvsky, O.F. Kolomys, V. V. Strelchuk, M.A. Skoryk, I.A. Vasin, M.M. Osipyonok, Petro M. Lytvyn
Publikováno v:
Materials Science in Semiconductor Processing. 135:106054
The results of studies of printed ZnO:Co polycrystalline layers are first described. The layers with Co concentration of 0.78, 2.09 and 5.42 at.% were printed by a new stencil-free method developed by the authors and then were recrystallized at a tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28240432b92c3fa93c1f4b4099e4c1b0
https://doi.org/10.1016/j.mssp.2021.106054
https://doi.org/10.1016/j.mssp.2021.106054
Autor:
A.F. Singaevsky, G.S. Pekar
Publikováno v:
Materials Science in Semiconductor Processing. 64:10-15
By studying the drift of Na+ ions in the firstly grown Na-doped bulk Ge crystals as well as by analyzing optical and some other characteristics of this material, the following conclusions are made, many of which are different from the commonly accept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1d8b45c48b79d3b75d4d719f0531ee2
https://doi.org/10.1016/j.mssp.2017.02.026
https://doi.org/10.1016/j.mssp.2017.02.026
Autor:
Yu. O. Polishchuk, V. P. Kladko, Larysa Khomenkova, M. M. Osipyonok, G.S. Pekar, L. V. Borkovska, T. V. Zashivailo, V.I. Kushnirenko, O. F. Syngaivsky
Publikováno v:
physica status solidi c. 12:1144-1147
Undoped and Li-doped ZnO thick films were fabricated by a screen-printing technique on sapphire substrate. The effect of sintering temperature (TS = 800, 900 and 1000 °C) and Li content ([Li] = 0.003, 0.03 and 0.3 wt%) on the photoluminescence (PL),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c49f27163427eee87bf0f681a2f975f7
https://doi.org/10.1002/pssc.201400232
https://doi.org/10.1002/pssc.201400232
Publikováno v:
Materials Science and Engineering: B. 34:12-17
Large US single crystals were fabricated by a “free growth” from the vapour phase in the presence of chemical compounds that bind the excess cadmium and do not enter into the growing crystal. Some parameters of the bulk crystals fabricated by thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c6349678d69ad69bdd223b7c621aa19
https://doi.org/10.1016/0921-5107(95)01220-6
https://doi.org/10.1016/0921-5107(95)01220-6
Autor:
V.I. Kushnirenko, G.S. Pekar, A.F. Singaevsky, L. V. Borkovska, Larysa Khomenkova, K. Avramenko, N.M. Osipyonok, V. V. Strelchuk
Publikováno v:
ECS Meeting Abstracts. :1477-1477
Over the past decades, zinc oxide has attracted considerable attention for its possible application in optoelectronics due to simultaneous observation of intense ultraviolet and visible emission offering the development of white light-emitting device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c31f8acfa6ff884dcf2e39ffdb5ded1
https://doi.org/10.1149/ma2015-01/23/1477
https://doi.org/10.1149/ma2015-01/23/1477
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