Zobrazeno 1 - 10
of 24
pro vyhledávání: '"G.S. Kousik"'
Publikováno v:
International Journal of Electronics. 73:1215-1223
A comparison of the damage induced by X-rays and electron-beam radiation on IGFETs has been made. It is observed that the ratio of the threshold voltage shift due to fixed positive charge (ΔV FPC) to the total threshold voltage shift (due to both fi
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 319:346-349
MOSFETs of channel lengths from 1.75 to 10 μm exposed to synchrotron radiation at Aladdin, Wisconsin (22.7 A critical wavelength for 800 MeV electrons) to a total incident energy of 120 mJ/cm 2 show the post-irradiated threshold voltage shifts to be
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
The work of K.L. Luke and L.-J. Cheng (1987) is extended to account for the asymmetric case of different surface recombination velocities at the two wafer surfaces. The authors present the analysis and discuss experimental procedures to extract the p
Publikováno v:
IEE Proceedings G Circuits, Devices and Systems. 139:400
This paper describes the dependence of the radiation-induced threshold voltage shift (δVt) of n-channel IGFET devices on the substrate doping concentration and the concentration of segregated boron atoms in the oxide. Substrate resistivities of 0.1
Publikováno v:
physica status solidi (b). 154:713-726
Scattering of charged particles is accompanied by the emission of soft photons. Quantum theory of 1/f noise, based on the infrared quasi-divergent coupling of the system to the electromagnetic field, indicates that the current associated with a beam
Autor:
J.G. Fossum, G.S. Kousik
Publikováno v:
Solar Cells. 5:75-79
A simple analytic description of the hole current injected into the n-n+ base of a p+-n-n+ solar cell under forward bias in the dark is derived for the intermediate case in which the hole diffusion length is comparable with the base width. The deriva
Publikováno v:
Canadian Journal of Physics. 65:365-375
Counting statistics of α particles from three sources, one containing 241Am; one containing 239Pu, 241Am, and 244Cu; and a source containing 148Gd, were determined over periods of 1–4000 min. In particular, the two-sample variance or Allan varianc
Publikováno v:
Solid-State Electronics. 31:831-834
For the first time flicker noise in the collector of p + - n-p Ge82-185 silicon bipolar transistors is observed unobstructed by the amplified base noise sources. The 1/ f spectrum from the collector is attributed to the scattering of carriers during
Publikováno v:
Solid-State Electronics. 31:233-236
The experimental values of α H of n -channel Si-JFETs are compared with recent calculations by Kousik for the intervalley and acoustic phonon scattering. The average value of α H due to these two processes is only a factor 3–4 larger than the emp
Publikováno v:
Advances in Physics. 34:663-702
Scattering of charged particles is accompanied by the emission of soft photons. Handel's theory of 1/f noise, based on the infrared quasi-divergent coupling of the system to the electromagnetic field, indicates that the current associated with a beam