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TEM and SIMS study of the behaviour of fluorine in as-deposited amorphous and polysilicon annealed at 600 to 950°C

Autor: Geoffrey R. Nash, J.F.W. Schiz, Peter Ashburn, G.R. Booker, C.D. Marsh

Publikováno v: Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629

The behaviour of fluorine in as-deposited polysilicon (p-Si) and as-deposited amorphous Si (a-Si) layers after annealing in the range 600-950C us investigated. The p-Si and a-Si were deposited by LPCVD at 610 and 560C, respectively, implanted with F

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::420dae2b933a7600dc4b55f454157e74
https://doi.org/10.1201/9781351074629-78

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DECONVOLUTION METHOD TO OBTAIN COMPOSITION PROFILES FROM SEM BACKSCATTERED ELECTRON SIGNAL PROFILES FOR BULK SPECIMENS

Autor: G.R. Booker, A. Konkol, Peter R. Wilshaw

Compositional profiles across CdTe/Cd y Hg 1- y Te interfaces in bulk specimens have been determined from backscattered electron (BSE) atomic-number contrast line profiles obtained using the scanning electron microscope. To improve the spatial resolu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0bf2a94143a8420439413f2e3f9ff37
https://ora.ox.ac.uk/objects/uuid:e6ee0c5e-86ec-40c1-8778-b18bcc9a87a3

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MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM

Autor: Robin J. Nicholas, N.J. Mason, E. Alphandery, P. Möck, G.R. Booker

Self-assembled Sb-based quantum dots (QDs) were grown by metal-organic vapour phase epitaxy and assessed by means of atomic force microscopy, transmission electron microscopy and photoluminescence. Two series of InSb QDs in a GaSb matrix were grown a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::666d971ed5729c6661aaa4b77c2b8dfe
https://ora.ox.ac.uk/objects/uuid:3b44c170-ae9f-4263-9c08-667eedc31b2e

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MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL

Autor: P. Möck, E. Aphandéry, N.J. Mason, Nigel D. Browning, Robin J. Nicholas, Teya Topuria, G.R. Booker

Publikováno v: Materials Science and Engineering: B. 80:112-115

Self-assembled InSb quantum dots (QDs) were grown by metal-organic vapour phase epitaxy (MOVPE) in a GaSb matrix. Atomic force microscopy (AFM), conventional diffraction contrast transmission electron microscopy (CTEM), high resolution transmission e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e7d16293bccca7d6ee03c2542a29aa7
https://doi.org/10.1016/s0921-5107(00)00625-5

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Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

Autor: A.I.A. Rahim, G.R. Booker, C.D. Marsh, Peter Ashburn

Publikováno v: IEEE Transactions on Electron Devices. 48:2506-2513

This paper investigates the effects of an in-situ hydrogen bake and an ex-situ hydrofluoric acid (HF) etch prior to polysilicon deposition on the electrical characteristics of bipolar transistors fabricated with low thermal budget in-situ phosphorus-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5e58b0b3a1bfa60f92b3b4a551dc2618
https://doi.org/10.1109/16.960375

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Behavior and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers

Autor: C.D. Marsh, N E Moiseiwitsch, Peter Ashburn, G.R. Booker

Publikováno v: Journal of Applied Physics. 87:7567-7578

A comprehensive study is made of the behaviour and effects of fluorine in n+ polysilicon layers. Sheet resistance, TEM and SIMS are used to obtain quantitative data for the breakup of the interfacial oxide, the epitaxial regrowth of the polysilicon a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e24637b918befcbf0a4f90ada0734044
https://doi.org/10.1063/1.373023

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