Zobrazeno 1 - 10
of 32
pro vyhledávání: '"G.P. Carver"'
The intensities of the bound to bound transitions of the shallow donors in silicon and CdTe are found to be strongly electric field dependent when observed by photoconductivity techniques at low temperatures. Under these conditions significant differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a721abc92e64ef11adfb93ada610cee2
https://doi.org/10.1016/0038-1098(77)90564-6
https://doi.org/10.1016/0038-1098(77)90564-6
Autor:
G.P. Carver
Publikováno v:
Combined Proceedings of the Leesburg Workshops on Reliability and Maintainability Computer-Aided Engineering in Concurrent Engineering.
In an automated environment, concurrent engineering is impossible without standards. The full automation and integration of industrial processes is impossible unless standardised hardware and software, especially standardised knowledge and informatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34257dd96c80172a4055558969112345
https://doi.org/10.1109/rmcae.1992.245534
https://doi.org/10.1109/rmcae.1992.245534
Dependence of the amplitude of transverse magnetoresistance oscillations in n-PbTe on film thickness
Publikováno v:
Solid State Communications. 30:461-466
The amplitudes of magnetophonon (MP) and Shubnikov-de Haas (SdH) oscillations have been measured in five n-type PbTe films grown epitaxially on BaF2 substrates. The relationships between the amplitudes of the oscillations, mobilities and thickness ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d73e84550adc5b0b335501bb23ab5f7
https://doi.org/10.1016/0038-1098(79)91188-8
https://doi.org/10.1016/0038-1098(79)91188-8
Autor:
M.G. Buehler, G.P. Carver
Publikováno v:
IEEE Transactions on Electron Devices. 27:2245-2252
The integrated gated-diode electrometer microelectronic test structure permits automated measurement of leakage currents in p-n junctions. The test method incorporates on-chip signal processing using an electrometer amplifier. An analysis of the equi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3133d6480033745735dfde29afdea045
https://doi.org/10.1109/t-ed.1980.20259
https://doi.org/10.1109/t-ed.1980.20259
Publikováno v:
Solid State Communications. 20:1089-1095
Velocity-electric field characteristics and evidence for travelling high field domains are reported for hot-electron conduction in single crystal epitaxial films of n -PbTe. Measurements were performed at 77 K, using nanosecond pulse techniques. Cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c10d1ed8f1e01e341d19d4ca20f8c54
https://doi.org/10.1016/0038-1098(76)90788-2
https://doi.org/10.1016/0038-1098(76)90788-2
Autor:
G.P. Carver
Publikováno v:
IEEE Transactions on Electron Devices. 30:948-954
Distortions in the dopant density profile obtained from dc MOSFET measurements due to short-channel effects are not properly predicted by present two-dimensional charge sharing, or charge conservation, models. The comparison of dopant profile data wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9946e10e1e401b0aa74f4ff3794fc13
https://doi.org/10.1109/t-ed.1983.21242
https://doi.org/10.1109/t-ed.1983.21242
Autor:
G.P. Carver, R.S. Allgaier
Publikováno v:
Journal of Non-Crystalline Solids. :347-352
Room-temperature measurements of the Hall coefficient and magnetoresistance were carried out on three samples of amorphous Tl2Se·As2Te3, using the Corbino disc configuration. The Hall mobilities were in the range 0.3–3.5 cm2/V-sec, and were positi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b533376842c3fdc1d7a0620fa3da7f83
https://doi.org/10.1016/0022-3093(72)90158-5
https://doi.org/10.1016/0022-3093(72)90158-5
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