Zobrazeno 1 - 10
of 106
pro vyhledávání: '"G.N. van den Hoven"'
Publikováno v:
Journal of Materials Research. 12:1401-1404
Single-crystal sapphire (α–Al2O3) was implanted at room temperature with 200 keV erbium ions to a fluence of 8 × 1013 cm–2. Ion channeling using 1.6 MeV He+ shows that the crystal suffers little damage for this low dose implant. Angular scans t
Autor:
G. ter Horst, G.N. van den Hoven, A. R. Schlatmann, P. M. Zagwijn, F. Garten, Akira Nishiyama, Joost W. M. Frenken, J. Vrijmoeth
Publikováno v:
Surface Science, 350(1-3), 229-238. ELSEVIER SCIENCE BV
A growth mode and interface structure analysis has been performed for Ag deposited at a high temperature of 300°C on the HF-treated Si(111):H surface by means of medium-energy ion scattering and elastic recoil detection analysis of hydrogen. The mea
Publikováno v:
IEEE Journal of Quantum Electronics. 32:1680-1684
The optical gain performance of a highly Er-doped waveguide amplifier is affected by concentration quenching and cooperative upconversion effects. Based on materials parameters, which were previously determined for Er-doped sodalime-silicate glass, w
Autor:
Mark L. Brongersma, Albert Polman, E. Radius, G.N. van den Hoven, E. Snoeks, Pieter G. Kik, Rosalía Serna, Jung H. Shin
Publikováno v:
Scopus-Elsevier
Photonic technology requires the modification and synthesis of new materials and devices for the generation, guiding, switching, multiplexing and amplification of light. This paper reviews how some of these devices may be made using ion beam synthesi
Publikováno v:
Journal of Applied Physics. 78:2642-2650
The photoluminescence of erbium‐doped semi‐insulating polycrystalline and amorphous silicon containing 30 at. % oxygen is studied. The films were deposited on single‐crystal Si substrates by chemical vapor deposition, implanted with 500 keV Er
Publikováno v:
Journal of Applied Physics. 77:6504-6510
Room‐temperature electroluminescence at 1.54 μm is demonstrated in erbium‐implanted oxygen‐doped silicon (27 at. % O), due to intra‐4f transitions of the Er3+. The luminescence is electrically stimulated by biasing metal‐(Si:O, Er)‐p+ si
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:378-381
We demonstrate sharp room-temperature electroluminescence at 1.54 μm due to intra-4f transitions of Er3+ in semi-insulating polycrystalline silicon (SIPOS) implanted with Er and annealed for implant damage recovery. Our measurements refer to SIPOS c
Publikováno v:
IEEE Photonics Technology Letters, 14(10), 1481-1483. Institute of Electrical and Electronics Engineers
The authors demonstrate the performance of a dynamic and reconfigurable metro-size wavelength-division-multiplexing (WDM) ring employing eight cascaded linear optical amplifiers. The ring has eight uncorrelated WDM channels, modulated at 10 Gb/s each
Publikováno v:
IEEE Photonics Technology Letters, 14(8), 1196-1198. Institute of Electrical and Electronics Engineers
We demonstrate the performance of linear optical amplifiers (LOAs) in a dynamic and reconfigurable wavelength-division-multiplexing (WDM) system. Eight WDM channels, each channel running at 10 Gb/s, are transmitted through two cascaded LOAs. Power tr
Publikováno v:
Journal of Applied Physics. 73:8179-8183
Soda‐lime‐silicate glass has been implanted with 500 keV Er ions at fluences between 8.6×1014 and 1.8×1016/cm2 with the aim to optically dope the material in the near surface region. The ion range was 100 nm, and Er concentrations in the range