Zobrazeno 1 - 10
of 109
pro vyhledávání: '"G.M. Swift"'
Publikováno v:
IEEE Transactions on Nuclear Science. 53:2076-2083
Fault-injection experiments on Virtex-IItrade FPGAs quantify failure and degradation modes in I/O channels incorporating triple module redundancy (TMR). With increasing frequency (to 100 MHz), full TMR under both I/O standards investigated (LVCMOS at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb071c1efc72be46f2993eb8b56628fb
https://doi.org/10.1109/tns.2006.876510
https://doi.org/10.1109/tns.2006.876510
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2468-2474
Soft-core processors implemented in static random access memory-based field-programmable-gate-arrays, while attractive to spacecraft designers, require upset mitigation. We investigate a proposed solution involving two levels of scrubbing plus triple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78455d636d32d46cac991943f88f9a01
https://doi.org/10.1109/tns.2005.860743
https://doi.org/10.1109/tns.2005.860743
Autor:
T. F. Wrobel, J. George, C. Carmichael, J. Moore, M. Napier, R. Koga, G.M. Swift, S. Rezgui, J. Maksymowicz, A. Lesea
Publikováno v:
IEEE Transactions on Nuclear Science. 51:3469-3474
Heavy-ion irradiation and fault injection experiments were conducted to evaluate the upset sensitivity of the Xilinx Virtex-II field programmable gate arrays (FPGAs) input/output block (IOB). Full triple module redundancy (TMR) of the IOBs, in combin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::240a235729bacfa08199d643cc4d5d94
https://doi.org/10.1109/tns.2004.839190
https://doi.org/10.1109/tns.2004.839190
Autor:
J. George, M. Napier, Larry Edmonds, T. Langley, C. Carmichael, G.M. Swift, C. Yui, P. Murray, R. Koga, K. Lanes
Publikováno v:
IEEE Transactions on Nuclear Science. 51:2825-2833
A comparison of heavy-ion and proton-induced single event effect sensitivities has been made using the Xilinx Virtex-II field programmable gate array (FPGA). Recently fabricated test samples are selected for observations of single event upset and sin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97783ba0e56bcc3e4bef0face7fc838b
https://doi.org/10.1109/tns.2004.835057
https://doi.org/10.1109/tns.2004.835057
Publikováno v:
IEEE Transactions on Nuclear Science. 50:2107-2112
Single-event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes and core voltages. Multiple-bit upsets in registers and D-cache were measured and compared with singl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55aeb1113e62e7e90e0c351be48c4deb
https://doi.org/10.1109/tns.2003.821820
https://doi.org/10.1109/tns.2003.821820
Autor:
Leif Scheick, G.M. Swift
Publikováno v:
IEEE Transactions on Nuclear Science. 49:2810-2817
A new dosimetry method using an array of MOS transistors is described for a measuring dose absorbed from ionizing radiation. The method uses direct measurement of the number of cells that change state as a function of applied-operating bias to a SRAM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96613f9d366a4be7256a6c6ea28a4751
https://doi.org/10.1109/tns.2002.805445
https://doi.org/10.1109/tns.2002.805445
Publikováno v:
IEEE Transactions on Nuclear Science. 49:2759-2764
Excessive source-pin leakage current was found to cause the Galileo spacecraft gyroscope slew sensor to report incorrect spacecraft slew and thereby cause the computer to command inappropriate slewing. At normal bias, ground tests had found similar l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4935de6d1b439f4b4eb8450da86512df
https://doi.org/10.1109/tns.2002.805976
https://doi.org/10.1109/tns.2002.805976
Publikováno v:
IEEE Transactions on Nuclear Science. 49:3148-3155
Single-event upset effects from heavy ions and protons are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors, and compared with results for similar devices with bulk substrates. The cross sections of the SOI processors are lowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::109c6ed422404e605c4b63a0ec34ebe5
https://doi.org/10.1109/tns.2002.805441
https://doi.org/10.1109/tns.2002.805441
Publikováno v:
IEEE Transactions on Nuclear Science. 48:1925-1930
Radiation exposure of certain types of devices tends to stick bits, causing them to not be read out correctly after programming. Evidence of a linear trend in stuck bits in SDRAM memory cells is presented. This trend makes a cross section, as traditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::958cbac38697499869b8eb343cc5cd64
https://doi.org/10.1109/23.983152
https://doi.org/10.1109/23.983152
Publikováno v:
IEEE Transactions on Nuclear Science. 48:1822-1827
Proton and heavy ion upset susceptibility has been measured individually for six types of storage elements in an advanced commercial processor, the PowerPC750, from two manufacturers: Motorola and IBM. Data on interfering program malfunctions was als
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d3535d1d7ed52fb622f979c780217f0
https://doi.org/10.1109/23.983136
https://doi.org/10.1109/23.983136