Zobrazeno 1 - 10
of 106
pro vyhledávání: '"G.K.L. Goh"'
Publikováno v:
Journal of Crystal Growth. 310:3626-3629
Ordered ZnO nanostructures are synthesized through nanolithographically patterned templates on GaN by using the hydrothermal method. Due to the confined nucleation sites, ZnO nanostructures are selectively grown and replicate the geometry and dimensi
Publikováno v:
Thin Solid Films. 516:5545-5550
Polycrystalline BaTiO 3 thin films were grown on Ti-covered polymer substrates at 80 °C using the microwave-hydrothermal technique. Onset of BaTiO 3 formation occurred almost instantaneously at 80 °C and complete film coverage was achieved within 2
Publikováno v:
Thin Solid Films. 515:6577-6581
The dielectric properties of KTaO 3 and KNbO 3 I–V perovskite thin films grown by hydrothermal epitaxy on conducting SrTiO 3 substrates are presented. As-grown films exhibited frequency dispersion of dielectric properties and high tangent losses as
Publikováno v:
IEEE Transactions on Magnetics. 41:1118-1125
We present a realistic modeling of ballistic electron transport in a hybrid ferromagnetic (FM) two-dimensional electron gas (2DEG) device, consisting of an FM gate on an AlGaAs-GaAs or AlSb-InAs high electron mobility transistor (HEMT) heterostructur
Publikováno v:
Wear. 206:24-32
Pure alumina inserts with grain sizes of 0.83, 2.94 and 6.33 μm were produced by slip casting and pressureless sintering. They were used to turn medium carbon steel in dry, continuous cutting conditions, at a cutting speed of 450 m min -1 . Examinat
Publikováno v:
Wear. 201:199-208
Alumina inserts were used to turn medium carbon steel bars in dry, continuous cutting conditions at a cutting speed of 450 m min−1. Three wear mechanisms were identified: plastic deformation-induced necking of asperities; grain spallation; and bulk
Publikováno v:
2005 7th Electronic Packaging Technology Conference.
Rapidly growing performance and mixed-signal integration is driving the need for product and component miniaturization in electronics applications. Integral passive technology is a potentially attractive solution to replace discrete passives. Capacit
Autor:
G.K.L. Goh, A.D. Handoko
Publikováno v:
Acta Crystallographica Section A Foundations of Crystallography. 64:C594-C594
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