Zobrazeno 1 - 10
of 66
pro vyhledávání: '"G.J. Scilla"'
Autor:
D. McInturff, T. J. de Lyon, Jerry M. Woodall, N.I. Buchan, G.J. Scilla, Peter D. Kirchner, F. Cardone
Publikováno v:
Journal of Crystal Growth. 111:564-569
Carbon tetrachloride (CCl4) and chloroform (CHCl3) have been studied as carbon doping sources for the compound semiconductors GaAs, GaP, InP, and Ga0.51In0.49P grown by gas source MBE from elemental Group III sources and thermally cracked Group V hyd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78644717d59a87595536ac7d15c96d87
https://doi.org/10.1016/0022-0248(91)91040-h
https://doi.org/10.1016/0022-0248(91)91040-h
Publikováno v:
Journal of Crystal Growth. 110:692-696
The effect of Hg partial pressure on arsenic doping of HgCdTe is studied. It is found that control of Hg partial pressure is very important in obtaining reproducible doping, and use of high Hg pressure is the key to obtain heavily doped layers. Typic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9321b99d7937bc379bbb012bcaf3783
https://doi.org/10.1016/0022-0248(91)90625-f
https://doi.org/10.1016/0022-0248(91)90625-f
Publikováno v:
Journal of Electronic Materials. 19:277-281
The incorporation of carbon into GaAs grown by metal-organic vapor phase epitaxy has been studied through the addition of CH2I2, CH3I, HI and I2 to the growth ambient. The epitaxial GaAs was grown using Ga(CH3)3 and AsH3 in a low pressure reactor. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e7fc3cb63e763d2f096fbf3d101c66
https://doi.org/10.1007/bf02733819
https://doi.org/10.1007/bf02733819
Autor:
Thomas F. Kuech, Patricia M. Mooney, Mark S. Goorsky, F. Cardone, R. M. Potemski, G.J. Scilla
Publikováno v:
Applied Physics Letters. 58:1979-1981
Intentional oxygen doping (≳1017 cm−3) of GaAs and Al0.30Ga0.70As epitaxial layers was achieved during metalorganic vapor phase epitaxy through use of an oxygen‐bearing metalorganic precursor, dimethylaluminum methoxide (CH3)2AlOCH3. The incorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b641adcfa3045eccfa05825d93b8979
https://doi.org/10.1063/1.105038
https://doi.org/10.1063/1.105038
Publikováno v:
AIP Conference Proceedings.
This paper describes the doping behavior of arsenic in HgCdTe, grown by organometallic epitaxy using the direct alloy growth process. It is shown that arsenic readily incorporates into HgCdTe during this growth process, to a doping concentration of 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e963f97d84e66dbf908844ddf315b0df
https://doi.org/10.1063/1.41079
https://doi.org/10.1063/1.41079
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:136
The group III precursors trimethylgallium (TMG), triethylgallium (TEG), trimethylaluminum (TMA), and triethylaluminum (TEA) have been investigated as intrinsic carbon doping sources for epilayers of GaP, Ga0.51In0.49P, and Al0.51In0.49P grown by meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5a908d65030a3913da7f3dfd7aa3e54
https://doi.org/10.1116/1.585275
https://doi.org/10.1116/1.585275
Publikováno v:
Journal of Crystal Growth. 93:569-575
Deep levels in p-type GaAs have direct impact on the performance of many devices, such as the hetero-junction transistor (HBT). We have studied the influences of dopant elements (Mg or Zn), growth temperature, and doping concentration on the characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cad208230ad407a1cc3e2c516c39ac1
https://doi.org/10.1016/0022-0248(88)90585-4
https://doi.org/10.1016/0022-0248(88)90585-4
Publikováno v:
Journal of Crystal Growth. 77:539-545
Many optical and digital device structures could be enhanced by the ability to grow highly perfect interfaces on surfaces which have been chemically processed. Growth surfaces prepared through wet chemical processing typically exhibit a large density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f7f835299faa6cfb59484a93b901eee
https://doi.org/10.1016/0022-0248(86)90349-0
https://doi.org/10.1016/0022-0248(86)90349-0
Publikováno v:
Journal of Crystal Growth. 93:550-556
The quantitative measurement of carbon concentration in films grown by MOVPE is required to elucidate both the growth reactions and the influence of reaction-by-products. Secondary ion mass spectroscopy (SIMS) can determine the total carbon content i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39b48209d95c994729aa1ae3c85e0623
https://doi.org/10.1016/0022-0248(88)90582-9
https://doi.org/10.1016/0022-0248(88)90582-9
Publikováno v:
Journal of Crystal Growth. 93:624-630
The accurate placement of dopants during chemical vapor deposition is complicated by many factors: growth temperature, reactor design, flow conditions, and the choice of growth and doping chemistry. Long doping transients have often been noted in str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebd68e8fca53928bfb7f7a375b90485e
https://doi.org/10.1016/0022-0248(88)90594-5
https://doi.org/10.1016/0022-0248(88)90594-5