Zobrazeno 1 - 10
of 138
pro vyhledávání: '"G.J. Hu"'
Autor:
S.J. Li, G.J. Hu, B. Jing, Q. Zhao, S.L. Su, M.Y. He, Z.Y. Wei, Y. Tian, C.D. Wang, D.H. Ping
Publikováno v:
Journal of Materials Research and Technology, Vol 18, Iss , Pp 5045-5052 (2022)
In quenched Fe-C (C: 0.0∼2.0 wt.%) binary alloys, the body-centered cubic (BCC) {112}-type twin structure (density, size and morphology) in martensite was investigated by means of transmission electron microscopy (TEM). In the samples quenched to r
Externí odkaz:
https://doaj.org/article/4e15c57bfde14f5988e87a2dcaed15ce
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Applied Surface Science. 288:40-43
The influence of annealing temperature on the optical properties of surface electron accumulation layers in n -type (1 0 0) InAs wafers has been investigated by Raman spectroscopy. It exhibits that Raman peaks due to scattering by unscreened LO phono
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54e613450101709597bdf97f3380a4cb
https://doi.org/10.1016/j.apsusc.2013.09.095
https://doi.org/10.1016/j.apsusc.2013.09.095
Autor:
Wang Qinnan, Guirui Yu, L. Wei, X.Y. Chen, Huiyong Deng, G.J. Hu, Juanxia Wu, Song Hu, Yuna Sun, Congting Sun, Ning Dai
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 285:11-17
Damage buildup in 80 keV Be-implanted InAs0.93Sb0.07 epitaxial layer grown by liquid epitaxy growth (LPE) with the implantation fluences ranging from 1 × 1013 to 4 × 1015 cm−2 have been detailedly investigated by high resolution X-ray diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66dd4d7035a5177718cd753f5ddd170a
https://doi.org/10.1016/j.nimb.2012.05.003
https://doi.org/10.1016/j.nimb.2012.05.003
Autor:
D.G. Austing, A.J. SpringThorpe, Kuanghong Gao, Nengli Dai, J. H. Chu, Tie Lin, G.J. Hu, Guangyou Yu
Publikováno v:
Solid State Communications. 151:1537-1540
Magnetoconductivity measurements are performed on a parabolic quantum well structure. The weak localization effect is observed at a low magnetic field for both single-subband and double-subband occupation regimes. Applying weak-localization theory, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b38446ac53f9aa8f1ed4bd642d65aef
https://doi.org/10.1016/j.ssc.2011.07.033
https://doi.org/10.1016/j.ssc.2011.07.033
Autor:
G.J. Hu, Wang Qinnan, Congting Sun, Mingwei Chen, Ning Dai, Huiyong Deng, X.Y. Chen, Juanxia Wu, Yuna Sun, Song Hu
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 269:2527-2531
The lattice expansion in InAs single crystal, due to ion-implantation by 80 keV Be ions with the implantation fluencies ranging from 1 × 1012 to 2 × 1016 cm−2, has been investigated by using high resolution X-ray diffraction (HRXRD), transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a087c1639af6173254fb0bd5ac2ea045
https://doi.org/10.1016/j.nimb.2011.07.099
https://doi.org/10.1016/j.nimb.2011.07.099
Autor:
X.Y. Gong, G.J. Hu, Nengli Dai, Huiyong Deng, Tomuo Yamaguchi, Y.Z. Gao, W.Z. Fang, Mitsuru Aoyama
Publikováno v:
Applied Surface Science. 244:297-300
The transmittance of InAsSb/InAsPSb heterostructures is remarkably improved by depositing a Si 3 N 4 top layer. This demonstrates its good anti-reflective property. A study of the influence of various factors on the transmittance of the heterostructu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dedec2efe8d4824c2bd7a965df362e01
https://doi.org/10.1016/j.apsusc.2004.10.123
https://doi.org/10.1016/j.apsusc.2004.10.123
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 201:520-524
The influence of doping Y 3+ on the photo- and thermoluminescence of PbWO 4 is reported in this article. Doping Y 3+ in PWO can strongly suppress the red light emission so reduce the slow emission component. Defects such as F, F + , Pb 3+ and O − c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f71b928a4d4dd2a1008d36b1a525196
https://doi.org/10.1016/s0168-583x(02)01786-x
https://doi.org/10.1016/s0168-583x(02)01786-x
Publikováno v:
Journal of the American Ceramic Society. 96:355-357
A special sequence of multilayer, consisting of PbZr0.5Ti0.5O3 and SrTiO3 films, was fabricated using a simple chemical solution deposition. X-ray diffractometer (XRD) measurement reveals that each film in this multilayer has been crystallized into t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::523061f59f041cb159fdd4e3c8858582
https://doi.org/10.1111/jace.12132
https://doi.org/10.1111/jace.12132
Publikováno v:
Journal of Physics: Condensed Matter. 14:7065-7069
The phototransferred thermoluminescence (PTTL) of PWO and PWO:Y crystals was studied in the range of 30–300oC. From the experiments, one can conclude that in PWO crystals there are abundant traps and that some traps must be very deep. Visible light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b6327060b5f776dd3e6f214b59e00b5
https://doi.org/10.1088/0953-8984/14/29/308
https://doi.org/10.1088/0953-8984/14/29/308