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Publikováno v:
IEEE Transactions on Nuclear Science. 39:2211-2219
X-ray irradiated oxide, nitrided oxide, and reoxidized nitrided oxide films were studied with electron spin resonance. Nitridation of oxide films reduces the density of radiation-induced E' centers and creates bridging nitrogen center precursors, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::799c0379603fb775a3b52f8a0531ad8e
https://doi.org/10.1109/23.211423
https://doi.org/10.1109/23.211423
Publikováno v:
IEEE Transactions on Electron Devices. 39:677-684
The inversion layer mobility of reoxidized nitrided oxide (RNO) n-MOSFETs (and, to a lesser degree, p-MOSFETs) is found to increase after irradiation and subsequent low-temperature anneal, a process sequence which occurs in X-ray or electron-beam lit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e56ff6693b10f2abc9cb69c6c2ab0bb7
https://doi.org/10.1109/16.123494
https://doi.org/10.1109/16.123494
Autor:
G.J. Dunn, H.E. Boesch
Publikováno v:
IEEE Transactions on Nuclear Science. 38:1083-1088
Charge generation and hole transport were measured in reoxidized nitrided (RNO) and radiation-hard thermal oxide (OX) as a function of temperature from 77 to 295 K and applied field from 1 to 5 MV/cm using pulsed irradiation and a fast time-resolved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ef0fc1212faebd4d11c87c200d0ed9
https://doi.org/10.1109/23.124078
https://doi.org/10.1109/23.124078
Autor:
J.T. Krick, G.J. Dunn
Publikováno v:
IEEE Transactions on Electron Devices. 38:901-906
Channel hot carrier reliability of reoxidized nitrided oxide (RNO) and conventional oxide p-MOSFETs was studied. RNO p-MOSFET degradation is shown to be due to electron trapping, as in oxide devices. Since nitridation introduces electron traps, devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d269280e10d0c99de84b7f3c9bb92193
https://doi.org/10.1109/16.75221
https://doi.org/10.1109/16.75221
Autor:
G.J. Dunn, S.A. Scott
Publikováno v:
IEEE Transactions on Electron Devices. 37:1719-1726
The mechanisms of channel hot-carrier-induced degradation in short n-channel MOSFETs with reoxidized nitrided oxide as the gate dielectric are discussed. Charge pumping measurements, supported by observations on the gate voltage dependence of degrada
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::178f8c100494b8bde21acdefbec9fed1
https://doi.org/10.1109/16.55760
https://doi.org/10.1109/16.55760
Autor:
G.J. Dunn
Publikováno v:
Technology Management : the New International Language.
Summary form only given, as follows. The author discusses the developing market for private telecommunications services in Poland and the Soviet Union, with an emphasis on cable television and cellular telephones. Two deals are discussed in particula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::130d42aa6f08c3175e95f451c15db30a
https://doi.org/10.1109/picmet.1991.183822
https://doi.org/10.1109/picmet.1991.183822
Autor:
B.S. Doyle, G.J. Dunn
Publikováno v:
IEEE Electron Device Letters. 13:38-40
Recovery of channel hot-carrier damage in reoxidized nitrided oxide (RNO) n- and p-MOSFETs is examined. It is found that recovery is substantially greater in RNO versus conventional oxide (CO) devices, particularly for p-MOSFETs. The authors believe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d6547e476b2b2f81779eba0a64f62e8
https://doi.org/10.1109/55.144944
https://doi.org/10.1109/55.144944
Publikováno v:
IEEE Electron Device Letters. 12:184-186
n-channel MOSFETs with reoxidized nitrided oxides (RNOs) are compared to conventional oxides with respect to their susceptibility to latent damage from electrostatic discharge (ESD) and ESD-like events. It is shown, using both ESD events and simulate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::880e3395bc47eced1bac9ed83b0c4097
https://doi.org/10.1109/55.75758
https://doi.org/10.1109/55.75758
Autor:
B.S. Doyle, G.J. Dunn
Publikováno v:
IEEE Electron Device Letters. 12:63-65
Dynamic channel hot-carrier stress measurements were performed on reoxidized nitrided oxide (RNO) nMOSFETs in order to determine the importance of the high-gate-voltage electron trapping that occurs during static stress. RNO transistors stressed unde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41165ed899f77c223e21320538f94552
https://doi.org/10.1109/55.75704
https://doi.org/10.1109/55.75704