Zobrazeno 1 - 10
of 297
pro vyhledávání: '"G.J. Adriaenssens"'
Autor:
G.J. Adriaenssens, M. L. Benkhedir
Publikováno v:
Journal of Non-Crystalline Solids. 354:2687-2690
Analysis of transient photoconductivity (TPC) measurements in terms of multiple-trapping transport kinetics provides strong evidence for the presence of two sets of ‘shallow’ traps. One set of electrically neutral hole and electron traps lies ∼
Publikováno v:
Journal of Non-Crystalline Solids. 352:1675-1678
The constant photocurrent method has been used for many years to study the sub-bandgap absorption coefficient of inorganic amorphous semiconductors such as amorphous silicon. In this paper CPM is applied to conjugated polymers and blends of polymers
Publikováno v:
Journal of Non-Crystalline Solids. 352:1543-1546
Two discrete defect levels that are distinct from the levels of the standard negative-U model have been located in the a-Se bandgap. One level, situated near the equilibrium Fermi energy level, corresponds to the deep electron trap whose effects on c
Publikováno v:
Journal of Non-Crystalline Solids. 352:1122-1125
Time-of-flight (TOF) measurements are commonly accepted as one of the most reliable experimental technique to determine the mobility and density-of-states (DOS) distribution in disordered organic and inorganic materials. However, interpretation of TO
Publikováno v:
Journal of Non-Crystalline Solids. 344:193-198
Energy locations in the band gap have been determined for the thermally accessible levels of the negative-U defect centers in amorphous selenium. Both the temperature dependence of the steady-state photocurrents, and an analysis of emission currents
Autor:
S.D. Shutov, G.J. Adriaenssens, N. N. Syrbu, David Furniss, Mihai S. Iovu, Andrei M. Andriesh, Angela B. Seddon
Publikováno v:
Journal of Non-Crystalline Solids. :279-282
The absorption and emission spectra of Ga–La–S–O glasses with fixed cation ratio Ga/La=0.7/0.3 and two oxygen contents 0.65 wt% and 2.95 wt% were studied for two Pr3+ doping levels of 0.1 and 1.0 wt%. Presence of oxygen induces blue shift of th
Publikováno v:
Thin Solid Films. 427:123-126
Time-of-flight transient photoconductivity measurements in polymorphous silicon samples reveal a 10-fold increase of the room temperature hole drift mobility up to 1.5×10−2 cm2 V−1 s−1 when the deposition total gas pressure is raised from 133
Publikováno v:
Journal of Non-Crystalline Solids. :1047-1051
The equilibrium carrier mobility in an energetically disordered and positionally random hopping system is analytically calculated by direct averaging of carrier hopping rates and by the use of the effective transport energy concept. In good quantitat
Publikováno v:
Journal of Non-Crystalline Solids. :305-309
Random intrinsic electrostatic potentials cause local intrinsic electric fields that must affect the Onsager probability of geminate pair dissociation. If the intrinsic fluctuating field is strong enough the dissociation yield could be close to unity