Zobrazeno 1 - 10
of 35
pro vyhledávání: '"G.F. Niu"'
Publikováno v:
Solid-State Electronics. 41:1377-1382
A new definition of L eff which agrees well with electrical measurements using the channel resistance method is proposed, based on numerically simulated surface potential. Using the L eff definition, the physics underlying the fact that L eff can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4f0e401da7ce0238897ee785e2399e8
https://doi.org/10.1016/s0038-1101(97)00076-2
https://doi.org/10.1016/s0038-1101(97)00076-2
Publikováno v:
Solid-State Electronics. 39:69-73
An analytical model of hole confinement gate voltage range is derived for SiGe-channel p-MOSFETs and verified by SEDAN-3 simulation. The hole confinement gate voltage range is shown to be a function of threshold voltage, gate oxide thickness to Si ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::958addedf9ff45c2bea652a0e4a657c8
https://doi.org/10.1016/0038-1101(95)00101-x
https://doi.org/10.1016/0038-1101(95)00101-x
Publikováno v:
IEEE Transactions on Electron Devices. 43:2034-2037
Recent surface potential models for fully depleted short-channel SOI MOSFET's are compared. The parabolic potential approach is clarified to be a special case of the quasi-2-D approach. An extended quasi-2-D model is also derived.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a3253c9198aa9523c2011f0786c9633
https://doi.org/10.1109/16.543048
https://doi.org/10.1109/16.543048
Publikováno v:
Solid-State Electronics. 38:1805-1810
An analytical back gate bias dependent subthreshold swing model of the accumulation-mode p -channel SOI MOSFETs is derived using the exponential dependence of the carrier concentrations on the potential through the silicon film. The subthreshold swin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::274a8173dc1819c54425eba796639ddd
https://doi.org/10.1016/0038-1101(95)00002-b
https://doi.org/10.1016/0038-1101(95)00002-b
Publikováno v:
Solid-State Electronics. 38:323-329
A physical model of SiGe PMOS is presented. The condition for proper design ensuring the onset of strong inversion in the SiGe channel is modeled as a function of device structure. The threshold voltages and the inversion charge densities for both ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::486443ba61ec63c74fc43e4bd9620b38
https://doi.org/10.1016/0038-1101(94)00088-w
https://doi.org/10.1016/0038-1101(94)00088-w
Publikováno v:
IEEE Transactions on Electron Devices. 42:2242-2246
Analytical models of threshold voltage and inversion charge for the graded SiGe-channel modulation-doped p-MOSFETs have been derived and verified by SEDAN-3 simulation. The effect of threshold voltage adjustment on hole confinement, and the increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdd3abd51e74c41274c8243e4b20d31e
https://doi.org/10.1109/16.477788
https://doi.org/10.1109/16.477788
Publikováno v:
International Electron Devices and Materials Symposium.
The theory of operation for the high effective channel mobility back junction SiGe PMOS is presented. The reduction of the vertical electric field and the improvement in hole confinement are explained physically. An analytical back junction bias depe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6079f4ce4b9b822cfb55137a222ef4e2
https://doi.org/10.1109/edms.1994.771138
https://doi.org/10.1109/edms.1994.771138
Publikováno v:
Solid-State Electronics. 39:305-307
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf2ae0a4087e89b87dd73895dc81572e
https://doi.org/10.1016/0038-1101(95)00151-4
https://doi.org/10.1016/0038-1101(95)00151-4
Publikováno v:
Proceedings 1996 IEEE Hong Kong Electron Devices Meeting.
This paper describes user-interface building for device simulation using a heterogeneous computer network. After profiling MINIMOS and analyzing the user demands, we decide to parallize the input parameter sets and then build the Multiple Input-files
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51fe1fe72c2751c0017dac369e8ccaf4
https://doi.org/10.1109/hkedm.1996.566312
https://doi.org/10.1109/hkedm.1996.566312
Publikováno v:
Proceedings 1996 IEEE Hong Kong Electron Devices Meeting.
Recent surface potential models for fully depleted SOI MOSFETs are compared. The parabolic potential approach is clarified to be a special case of the quasi-2D approach. The earlier quasi-2D model is generalized by relating the front and back surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c1ef4eda6eec44f340f1b4b82858602
https://doi.org/10.1109/hkedm.1996.566299
https://doi.org/10.1109/hkedm.1996.566299