Zobrazeno 1 - 10
of 82
pro vyhledávání: '"G.D. Wilk"'
Publikováno v:
Solid-State Electronics. 50:1012-1015
We report detailed current-transport studies of ultrathin Al 2 O 3 dielectrics on GaAs grown by atomic layer deposition (ALD) as a function of film thickness, ambient temperature and electric field. The leakage current in ultrathin Al 2 O 3 on GaAs i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d64a69e13954a9f7430f15007fa62a4
https://doi.org/10.1016/j.sse.2006.04.021
https://doi.org/10.1016/j.sse.2006.04.021
Publikováno v:
Solid-State Electronics. 49:790-794
Oxide surface passivation grown by atomic layer deposition (ALD) has been applied to GaAs metal–semiconductor field-effect transistors (MESFETs). The breakdown characteristic of a MESFET is greatly improved by both Al2O3 and HfO2 passivation. Three
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a691d42148c7cf078d06d4741121caca
https://doi.org/10.1016/j.sse.2005.01.010
https://doi.org/10.1016/j.sse.2005.01.010
Autor:
Don Monroe, Gregory Timp, Frieder H. Baumann, Yi Ma, P. J. Silverman, D. Hwang, Muhammad A. Alam, B. E. Weir, J. Bude, A. Hamad, M.M. Brown, A. Ghetti, G.D. Wilk, T.W. Sorsch
Publikováno v:
Solid-State Electronics. 46:321-328
We describe the reliability projection methods currently used and show that 1.6 nm oxides are sufficiently reliable even if soft breakdown is considered the point of failure. We also explore the possibility of using oxides after soft breakdown.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23e9fc569cd45476462f10189f730be7
https://doi.org/10.1016/s0038-1101(01)00103-4
https://doi.org/10.1016/s0038-1101(01)00103-4
Autor:
S. Aravamudhan, F. Klemens, M.D. Morris, B Busch, P. J. Silverman, Martin L. Green, R. B. van Dover, G.D. Wilk, T.W. Sorsch, L. Manchanda
Publikováno v:
Microelectronic Engineering. 59:351-359
The exponential growth of the silicon industry can be attributed to that fact that silicon has a native oxide that is silicon dioxide. With SiO 2 soon approaching its fundamental limit, we must find an alternate to SiO 2 or a new switch to replace MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81c7bfb9404b70452bb80bc234033d1e
https://doi.org/10.1016/s0167-9317(01)00668-2
https://doi.org/10.1016/s0167-9317(01)00668-2
Autor:
G.D. Wilk, M.A. Gribelyuk
Publikováno v:
Thin Solid Films. 339:51-57
The microstructure of the MBE-grown Si/CaF 2 /Si (111) heterostructures is studied by high resolution transmission electron microscopy (HRTEM). Two distinct interface structure models have been identified from comparison with image simulations. In th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd916210c8154af447a6ab4287751f47
https://doi.org/10.1016/s0040-6090(98)01078-5
https://doi.org/10.1016/s0040-6090(98)01078-5
Publikováno v:
Materials Science and Engineering: B. 135:282-284
We report on a GaN metal-oxide-semiconductor field-effect-transistor (MOSFET) using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric. Compared to a GaN metal-semiconductor field-effect-transistor (MESFET) of similar design, the MOSFET exhibi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ad062726a553d761262fbfe61169ebe
https://doi.org/10.1016/j.mseb.2006.08.020
https://doi.org/10.1016/j.mseb.2006.08.020
Publikováno v:
IEEE Electron Device Letters. 21:569-571
Partially crystalline, silicon suboxide (SiO/sub x/, 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61bc604ea537dcbdfa754aabbfc9bcc9
https://doi.org/10.1109/55.887468
https://doi.org/10.1109/55.887468
Publikováno v:
IEEE Electron Device Letters. 20:132-134
We have developed a method for controllably and reproducibly growing self-limiting ultrathin oxides with excellent electrical properties in the range /spl sim/10-25 /spl Aring/ thick at temperatures ranging from 25 to 600/spl deg/C, respectively, usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d82676a5e87a0933ffbc47264dd04327
https://doi.org/10.1109/55.748911
https://doi.org/10.1109/55.748911
Publikováno v:
2005 International Semiconductor Device Research Symposium.
Al2O3 is a widely used insulating material for gate dielectric, tunneling barrier and protection coating due to its excellent dielectric properties, strong adhesion to dissimilar materials, and its thermal and chemical stability. Al2O3 has a high ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0914a499fcab5829721831dec58d7bf5
https://doi.org/10.1109/isdrs.2005.1596016
https://doi.org/10.1109/isdrs.2005.1596016
Publikováno v:
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..
We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic layer deposition (ALD) Al/sub 2/O/sub 3/ film as a gate dielectric and for surface passivation simultaneously. Compared to the conventional AlGaN/G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd7dd1081e47a57fcfc28cfa576ccc6f
https://doi.org/10.1109/lechpd.2004.1549689
https://doi.org/10.1109/lechpd.2004.1549689