Zobrazeno 1 - 10
of 53
pro vyhledávání: '"G.D. Vendelin"'
Autor:
Shih-Chieh Shin, G.D. Vendelin
Publikováno v:
IEEE Microwave Magazine. 8:84-90
Traditional descriptions of transistor power gains versus frequency lead to the conclusion that Mason's unilateral gain is unity at fmax and Gma extrapolated to unity gives fmag, where fmax > fmag> (Vendelin et al., 1990). A similar figure of merit i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0eddc9e73ee2ba196eaea86d1c063e1
https://doi.org/10.1109/mmw.2007.316274
https://doi.org/10.1109/mmw.2007.316274
Publikováno v:
IEEE Microwave and Wireless Components Letters. 13:105-107
Exact formulae are presented for both maximum available gain (G/sub ma/) and unilateral gain (U), which include both the magnitude and phase angle of the S/sub 21/ parameter. The result for G/sub ma/ is not unique since there are many possible soluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::988cc57f9b1d1194ab40b481be7a30f5
https://doi.org/10.1109/lmwc.2003.810118
https://doi.org/10.1109/lmwc.2003.810118
Autor:
G.D. Vendelin
Publikováno v:
2007 Asia-Pacific Microwave Conference.
This paper gives the history of the development of the first X-band solid-state radar developed at Texas Instruments 1964-1970, which has lead the way to today's MIC and MMIC technology for microwave and millimeter-wave applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4790f13827efbaed87fa7c8e85455fcb
https://doi.org/10.1109/apmc.2007.4554586
https://doi.org/10.1109/apmc.2007.4554586
Publikováno v:
2007 Asia-Pacific Microwave Conference.
This paper presents the design considerations for a stacked transistor topology for power amplifier design. A HBT is used to show at 1 GHz the effect of bias, device size, and matching, including interstage matching, which has had no beneficial effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9176170045618d293bfcdf140caad198
https://doi.org/10.1109/apmc.2007.4554963
https://doi.org/10.1109/apmc.2007.4554963
Autor:
G.D. Vendelin
Publikováno v:
1977 11th Asilomar Conference on Circuits, Systems and Computers, 1977. Conference Record..
The large-signal tuning parameters have been measured for three medium power GaAs FETs in both chip and packaged form. The output tuning parameter ( rL) is especially important for determining the output power, gain, and efficiency of power GaAs FET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67db0381153a5c6db562c54024d8b786
https://doi.org/10.1109/acssc.1977.729494
https://doi.org/10.1109/acssc.1977.729494
Autor:
G.D. Vendelin
Publikováno v:
MTT-S International Microwave Symposium Digest.
A technique is presented for evaluating the effect of Iossless feedback on the four noise parameters of a transistor. The feedback effects on noise parameters are presented for a FMT940 GaAs MESFET at 4 and 8 GHz.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b542091b80c0dd70b4a7fbae60b9a68
https://doi.org/10.1109/mwsym.1975.1123381
https://doi.org/10.1109/mwsym.1975.1123381
Autor:
G.D. Vendelin, R.M. Rector
Publikováno v:
MTT-S International Microwave Symposium Digest.
The design and performance of high power GaAs MESFET oscillators are described for two commercially available MESFET transistors. The oscillators were fabricated with packaged common-gate transistors on microstrip circuits. Power levels, and efficien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6737a698eb29836c6f4c2d16294e3d5
https://doi.org/10.1109/mwsym.1978.1123817
https://doi.org/10.1109/mwsym.1978.1123817
Autor:
G.D. Vendelin, S.A. Robinson
Publikováno v:
G-MTT International Symposium Digest.
High quality varactor diodes are currently characterized by either a "relative impedance" or a "transmission" technique. In view of the present limitations of these methods, a third method, a "reflection" technique, has been proposed. This method req
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::acc63e90d9bd7d66ade9d89f446579e5
https://doi.org/10.1109/gmtt.1966.1122556
https://doi.org/10.1109/gmtt.1966.1122556
Autor:
G.D. Vendelin
Publikováno v:
2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks.
Lossless feedback can be applied to three types of microwave amplifiers: (1) high gain amplifiers (HGA) Mason 1954 (2) low noise amplifiers (LNA) Vendelin 1975 and (3) high power amplifiers (HPA). The LNA and HPA are duals of each other. This paper g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a20896057f8721d9637b7c76bc35a48
https://doi.org/10.1109/rfit.2005.1598882
https://doi.org/10.1109/rfit.2005.1598882
Autor:
G.D. Vendelin
Publikováno v:
IEEE Spectrum. 27:48-50
It is pointed out that although quite a number of nonlinear descriptions are available for modeling microwave GaAs MESFETs (GaAs FETs), their accuracy is much debated. Like their silicon bipolar counterparts, the GaAs FET models are based on experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::671724e87c4d2260effb09d0db625f12
https://doi.org/10.1109/6.58456
https://doi.org/10.1109/6.58456