Zobrazeno 1 - 10
of 168
pro vyhledávání: '"G.D. Pettit"'
Publikováno v:
Semiconductor Science and Technology. 8:1420-1425
Photomodulation techniques have been used to study the fundamental transitions of partially strained InxGa1-xAs/GaAs (x=0.07 and 0.16) epilayers. The strain-induced splitting of the valence band was observed. The identification of the split valence b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12c858eeb52de8610614a44f0dbf8168
https://doi.org/10.1088/0268-1242/8/7/036
https://doi.org/10.1088/0268-1242/8/7/036
Publikováno v:
IEEE Photonics Technology Letters. 4:163-166
The authors have fabricated lattice matched InGaAs/AlInAs metal-semiconductor-metal photodetectors on InP. The detectors have very low dark currents, low capacitance, and good responsivity, corresponding to at least 95% internal collection efficiency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2174fbf210212f74bccfc74e286e8ce
https://doi.org/10.1109/68.122349
https://doi.org/10.1109/68.122349
Publikováno v:
LEOS '92 Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb7cad756bba60c7c5a79f7f881ed050
https://doi.org/10.1109/leos.1992.694168
https://doi.org/10.1109/leos.1992.694168
Autor:
T.N. Jackson, P.M. Solomon, M.A. Tischler, G.D. Pettit, F.J. Canora, J.F. DeGelormo, J.J. Bucchignano, S.J. Wind
Publikováno v:
[1991] 49th Annual Device Research Conference Digest.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f036022f0d4668bb74d15ac2912a321
https://doi.org/10.1109/drc.1991.664693
https://doi.org/10.1109/drc.1991.664693
Autor:
J.D. Axe, G.D. Pettit
Publikováno v:
Physical Review. 151:676-680
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d6f31e555de532982084d196e5b9b28
https://doi.org/10.1103/physrev.151.676
https://doi.org/10.1103/physrev.151.676
Autor:
G.D. Pettit, J.D. Axe
Publikováno v:
Journal of Physics and Chemistry of Solids. 27:621-624
Measurements at room temperature of the infrared reflectivity, low frequency dielectric constant (ϵg = 7.7 ± 0.2) and optical index of refraction (n = 1.555 ± 0.005) have been carried out on EuF2. The data have been analyzed both by classical disp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d8cf476926e0930ca2ac29ac630a01c
https://doi.org/10.1016/0022-3697(66)90211-3
https://doi.org/10.1016/0022-3697(66)90211-3
Publikováno v:
Solid State Communications. 8:693-697
The fundamental absorption edge of AlAs and AlP was investigated by optical transmission measurements from 2° to 300°K. The absorption edge in both materials is dominated by indirect optical transitions, and values of E g at 300°K are 2.45 eV for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::764e672887b279c3affa720a56024c71
https://doi.org/10.1016/0038-1098(70)90197-3
https://doi.org/10.1016/0038-1098(70)90197-3
Publikováno v:
Solid State Communications. 10:705-708
The observation of discrete pair line emission and the analysis of the spectra from Ge donor - C acceptor and S donor - Ge acceptor pairs in GaP is reported. The Ge donor binding energy is 0.200 ± 0.002 eV and the Ge acceptor binding energy is 0.258
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ddd56fe9b91af769b3087e51d814d6a
https://doi.org/10.1016/0038-1098(72)90590-x
https://doi.org/10.1016/0038-1098(72)90590-x
Publikováno v:
Surface Science. 174:399-400
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d88dfddefa153e2c1ec4b16e0307fbbe
https://doi.org/10.1016/0039-6028(86)90442-5
https://doi.org/10.1016/0039-6028(86)90442-5