Zobrazeno 1 - 10
of 40
pro vyhledávání: '"G.D. Guth"'
Autor:
L.E. Rogers, Robert A. Morgan, Demetrios N. Christodoulides, G.D. Guth, M. T. Asom, J. M. Catchmark
Publikováno v:
IEEE Journal of Quantum Electronics. 32:986-995
We observe for the first time up to nine transverse modes lasing in the individual elements of a two-dimensional vertical-cavity top surface-emitting laser array under pulsed operation. These modes consist of the TEM/sub 0,0/, TEM/sub 0,1/, TEM/sub 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85f94be2ea79d086ae508d8de226042c
https://doi.org/10.1109/3.502376
https://doi.org/10.1109/3.502376
Autor:
M. T. Asom, E.J. Laskowski, Stephen J. Pearton, M.W. Focht, Fan Ren, L.M.F. Chirovsky, R. F. Kopf, G. J. Przybylek, T.K. Woodward, S.-S. Pei, L.E. Smith, R.E. Leibenguth, G.D. Guth, J. M. Kuo, Anthony L. Lentine, L.A. D'Asaro
Publikováno v:
IEEE Electron Device Letters. 13:528-531
The authors have demonstrated a smart pixel prototype field-effect-transistor-self-electrooptic-effect-device (FET-SEED) integrated optoelectronic amplifier utilizing process technology suitable for flexible design and fabrication of high-yield optoe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::400fc72080be1f4301696452732986e1
https://doi.org/10.1109/55.192823
https://doi.org/10.1109/55.192823
Autor:
Ronald E. Leibenguth, L.A. D'Asaro, Joseph Michael Freund, David A. B. Miller, L.M.F. Chirovsky, Rick L. Morrison, G.D. Guth, Frederick B. McCormick, F. A. P. Tooley, Anthony L. Lentine, Sonya L. Walker, L. E. Smith, M.W. Focht, G. J. Przybylek
Publikováno v:
IEEE Journal of Quantum Electronics. 28:1539-1553
Two-dimensional arrays of logic self-electrooptic effect devices (L-SEEDs), consisting of electrically connected quantum-well p-i-n diode detectors and modulators are demonstrated. The topology of the electrical connections between the detectors is e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b783b48e910975ed7ee6c8bf14c5e6
https://doi.org/10.1109/3.135308
https://doi.org/10.1109/3.135308
Autor:
G.D. Guth, T.K. Woodward, S. Hui, L.A. D'Asaro, Anthony L. Lentine, L.E. Smith, L.M.F. Chirovsky, R.E. Leibenguth, R.A. Novotny, M.W. Focht
Publikováno v:
IEEE Electron Device Letters. 16:52-54
Ring oscillators having integrated-optical readout are realized in GaAs-AlGaAs field-effect transistor self-electro-optic-effect-device (FET-SEED) technology-a monolithic integration technology for FET's and normal-incidence multiple-quantum-well mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b00e787ea1ad2b20d36a364f0db85888
https://doi.org/10.1109/55.386030
https://doi.org/10.1109/55.386030
Autor:
R. A. Morgan, M.W. Focht, J. M. Catchmark, L.C. Luther, D. N. Christodoulides, G. P. Przybylek, T. Mullally, M. T. Asom, R.E. Leibenguth, Keisuke Kojima, G.D. Guth
Publikováno v:
Applied Physics Letters. 63:3122-3124
We report over 130 °C continuous wave operation of unbonded vertical cavity top‐surface emitting lasers emitting more than 1.0 mW at 110 °C. Furthermore, we control threshold currents to within only ±1.35 mA (±12%) over a 150 °C temperature ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7cdea1e289a83c027f563dcc26a75f0
https://doi.org/10.1063/1.110223
https://doi.org/10.1063/1.110223
Autor:
V. Swaminathan, L. E. Smith, R.E. Leibenguth, G.D. Guth, M.W. Focht, G. J. Przybylek, Joseph Michael Freund, L.A. D'Asaro
Publikováno v:
Applied Physics Letters. 61:687-689
We have used an electrical technique to determine the ambipolar lifetime in p‐i‐n GaAs/AlGaAs self‐electro‐optic‐effect devices in which the i region consists of a multiple quantum well structure (MQW). From an analysis of the voltage drop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d82067a5cf89675668e1fe3b865d16e
https://doi.org/10.1063/1.107822
https://doi.org/10.1063/1.107822
Autor:
Robert A. Morgan, J. M. Catchmark, M. T. Asom, L.E. Rogers, G.D. Guth, Demetrios N. Christodoulides
Publikováno v:
IEEE Princeton Section Sarnoff Symposium.
We report the occurrence of higher-order transverse modes lasing in the individual elements of a two dimensional VCSEL array. Each of these modes couples coherently to form very distinct supermodes. In addition, very interesting polarization properti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6899c86eb5e6dafc604502a735faf5f
https://doi.org/10.1109/sarnof.1995.636781
https://doi.org/10.1109/sarnof.1995.636781
Autor:
L. E. Smith, R.E. Leibenguth, L.A. D'Asaro, V. Swaminathan, M.W. Focht, G. J. Przybylek, Joseph Michael Freund, G.D. Guth
Publikováno v:
MRS Proceedings. 240
The forward current-voltage (I-V) characteristics of GaAs/AlGaAs Self Electro-optic Effect Device (SEED) p-i-n diodes were measured. The I-V curves exhibited a diode like behavior with an ideality factor of 2 for voltages in the range 0.5–1.25V. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d09a43d27b3882a8ffbb8f4f51d09f0
https://doi.org/10.1557/proc-240-537
https://doi.org/10.1557/proc-240-537
Publikováno v:
IEEE Electron Device Letters. 7:225-228
Monolithic integrated In 0.53 Ga 0.47 As/InP dc-coupled amplifiers have been built using self-aligned gate junction field-effect transistors (JFET's) grown by molecular beam epitaxy (MBE). The amplifier consists of a common-source inverter stage and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e734f2016d344c236ac0e92a9c392141
https://doi.org/10.1109/edl.1986.26353
https://doi.org/10.1109/edl.1986.26353
Publikováno v:
IEEE Transactions on Electron Devices. 33:725-729
A four-terminal epitaxial p-n-p junction field-effect transistor grown by molecular-beam epitaxy is shown to be an effective one-component gain control element when operated as a four-terminal device. Control of amplifier gain is demonstrated by usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cdac3ba50c1e885f16174e0968fa488
https://doi.org/10.1109/t-ed.1986.22560
https://doi.org/10.1109/t-ed.1986.22560