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Publikováno v:
IEEE Transactions on Electron Devices. 50:2573-2578
A physical model for electron and hole current transport is formulated in a novel heterodimensional contact that incorporates a barrier-enhancement region between a two-dimensional optically active InGaAs/InAlAs quantum well and a three-dimensional m
Autor:
D.B. Ameen, G.B. Tait
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 50:2253-2258
A fast convolution-based time-domain approach to global photonic-circuit simulation is presented that incorporates a physical device model in the complete detector or mixer circuit. The device used in the demonstration of this technique is a GaAs met
Autor:
S.H. Jones, G.B. Tait
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 47:877-881
A fast convolution-based computational approach is employed to integrate numerical solid-state device simulation with nonlinear millimeter-wave circuit simulation. Unlike previous combined harmonic-balance/device approaches, the high-frequency circui
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 45:512-518
Prototype planar four barrier GaAs/Al/sub 0.7/Ga/sub 0.3/As heterostructure barrier varactors (HBV's) for frequency tripling from 80 to 240 GHz have been fabricated using a process in which the device surface channel is etched prior to the formation
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 44:1240-1247
The channelized receiver being presented demonstrates the use of high temperature superconductor technology in a microwave system setting where superconductor, microwave-monolithic-integrated-circuit and hybrid-integrated-circuit components are unite
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 43:955-961
Accurate and efficient simulations of the large-signal time-dependent characteristics of second-harmonic transferred electron oscillators (TEO's) and heterostructure barrier varactor (HBV) frequency triplers have been obtained. This is accomplished b
Publikováno v:
IEEE Transactions on Electron Devices. 42:1393-1403
The DC and large-signal time-dependent electron transport properties of Heterostructure Barrier Varactors (HBVs) are investigated using a physical model which combines drift-diffusion current transport through the heterostructure bulk with thermionic
Autor:
G.B. Tait
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 42:1596-1601
Experimental data on mixer performance of unipolar semiconductor heterostructure diodes containing bulk alloy-ramp barriers are presented. Prototype Al/sub x/Ga/sub 1-x/As/GaAs heterostructures containing one, two, and four barriers are fabricated by
Autor:
G.B. Tait, E.H.C. Harper
Publikováno v:
Lancet (London, England). 1(6398)