Zobrazeno 1 - 10
of 82
pro vyhledávání: '"G.B. Gao"'
Publikováno v:
International Journal of Radiation Oncology*Biology*Physics. 114:e166
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb62510142d79f46ed228c04110742d9
https://doi.org/10.1016/j.ijrobp.2022.07.1044
https://doi.org/10.1016/j.ijrobp.2022.07.1044
Publikováno v:
International Journal of Radiation Oncology*Biology*Physics. 108:e626
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::433b075d0303b538d6a7dd6624b31d88
https://doi.org/10.1016/j.ijrobp.2020.07.1893
https://doi.org/10.1016/j.ijrobp.2020.07.1893
Publikováno v:
Computers and Concrete. 13:361-375
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6bfb57e366465b00884794ff9704745
https://doi.org/10.12989/cac.2014.13.3.361
https://doi.org/10.12989/cac.2014.13.3.361
Autor:
J. E. Van Nostrand, G.B. Gao, D. G. Park, David G. Cahill, Hadis Morkoç, S. J. Chey, Meng Tao, Z.F. Fan, S.N. Mohammad, Daizhen Li, A. Botchkarev, S. K. Suzue, J. Reed
Publikováno v:
Solid-State Electronics. 38:1351-1357
GaAs based metal-insulator-semiconductor structures utilizing a pseudomorphic Si interface layer were investigated. Deposition involved molecular beam epitaxy for GaAs and remote plasma enhanced chemical vapor epitaxy for Si and insulator (Si 3 N 4 )
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3d2f3ecf47f68548a6e4533159682f7
https://doi.org/10.1016/0038-1101(94)00267-j
https://doi.org/10.1016/0038-1101(94)00267-j
Autor:
G.B. Gao, S. J. Van Nostrand, D. G. Park, S. J. Chey, Z.F. Fan, David G. Cahill, Hadis Morkoç, K. Suzue, Meng Tao, A. Botchkarev, J. Reed
Publikováno v:
Journal of Crystal Growth. 150:1275-1280
The performance of GaAs-based field-effect transistors (FETs) in switching and power applications can be enhanced substantially by employing a metal-insulator-semiconductor (MIS) structure. Attempts thus far have fallen short due to large interface t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3e0a87f0dcc8e9a90383290a7b3c17f
https://doi.org/10.1016/0022-0248(95)80144-2
https://doi.org/10.1016/0022-0248(95)80144-2
Publikováno v:
Proceedings of the IEEE. 81:493-556
Recent developments in strained layer epitaxial systems are reviewed. Their interest stems primarily from the additional degree of freedom that strained layers provide in the design of heterostructures and devices, which has led to device structures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::227cb8b065453922b3ec350909286912
https://doi.org/10.1109/5.219338
https://doi.org/10.1109/5.219338
Publikováno v:
Solid-State Electronics. 35:1037-1044
This paper presents a model-based comparison of the high-frequency performance of Si/Si1−xGex heterojunction bipolar transistors (HBTs) and Si bipolar junction transistors (BJTs), in which the structural parameters were designed for maximum fT≈fm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21e13650968dbf75ad7b62f216a4d87b
https://doi.org/10.1016/0038-1101(92)90002-t
https://doi.org/10.1016/0038-1101(92)90002-t
Publikováno v:
IEEE Transactions on Electron Devices. 39:1295-1302
The thermal behavior of semiconductor devices fabricated with a variety of different materials has been analyzed using the three-dimensional transmission-line matrix (TLM) method. This method can easily incorporate the temperature dependence of therm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79902071a658b1adb058604c7adc77b8
https://doi.org/10.1109/16.137307
https://doi.org/10.1109/16.137307
Publikováno v:
IEEE Transactions on Electron Devices. 39:1987-1997
Design rules of AlGaAs-GaAs heterojunction bipolar transistors for power applications are presented and compared to those for Si microwave power transistors. Concepts discussed include the tradeoff between power gain, output power, power-added effici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9411b2e53aa6a1def2b767f8d5db1322
https://doi.org/10.1109/16.155869
https://doi.org/10.1109/16.155869
Publikováno v:
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
In this paper, the failure mechanism of VDMOS in DC/DC converter was analyzed in detail. The result was gained by the reliability project that included reliability experiment and reliability analysis. The VDMOS devices were used in the circuit of DC/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3adbca5db21d244b57928893bd0d820
https://doi.org/10.1109/ipfa.2009.5232626
https://doi.org/10.1109/ipfa.2009.5232626