Zobrazeno 1 - 10
of 94
pro vyhledávání: '"G.B. Ang"'
Autor:
A.C.T. Quah, C.Q. Chen, G.B. Ang, H.P. Ng, Francis Rivai, Zhihong Mai, J. Lam, Angela Teo, P.T. Ng
Publikováno v:
Microelectronics Reliability. :261-266
SRAM is most important component in the logic product. The failure analysis on the SRAM is well developed, but the SRAM IDDOFF analysis is still challenging for the FA engineers. The product has passed the functional test when IDDOFF is measured. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f0cabc6c24cb07d9dd7210cd0f462aa
https://doi.org/10.1016/j.microrel.2017.07.015
https://doi.org/10.1016/j.microrel.2017.07.015
Autor:
J. Lam, G.B. Ang, D. Nagalingam, S.P. Neo, Zhihong Mai, Francis Rivai, K. H. Yip, P.T. Ng, C.Q. Chen
Publikováno v:
Microelectronics Reliability. :141-144
As semiconductor technology keeps scaling down, many advanced technology and process were applied in the semiconductor process. Especially for the application of IOT (internet of thing) technology, the low leakage and low power consumption product wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4dd0f1dbd53d7b4b93fba3b139a686f
https://doi.org/10.1016/j.microrel.2017.07.014
https://doi.org/10.1016/j.microrel.2017.07.014
Publikováno v:
Microelectronics Journal. 62:38-42
IC functional failure is always a challenge for failure analysis engineers since it needs test pattern to access the defect location and electrically trigger it. Dynamic failure analysis is the only way to be used to do this kind of analysis. But it'
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a021d6595e253df5305de94bd0fb9217
https://doi.org/10.1016/j.mejo.2017.01.013
https://doi.org/10.1016/j.mejo.2017.01.013
Publikováno v:
Microelectronics Reliability. 64:317-320
Implantation is the key process in the modern semiconductor process which forms the basic device cell by different doping ditribution, depth, angle and element type. They are the key factors to affect the transistor performance, but the implantation-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76eed056bd4bfffe2d1d81a1fc9f28e8
https://doi.org/10.1016/j.microrel.2016.07.091
https://doi.org/10.1016/j.microrel.2016.07.091
Autor:
G.B. Ang, Naiyun Xu, H.P. Ng, Angela Teo, Yong Seng Tam, C. Q. Chen, D. Nagalingam, Zhihong Mai, Jeffrey Lam
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper places a strong emphasis on the importance of applying the correct FA approach in physical sample preparation to identify hidden defects that can be easily removed during analysis. A combination of mechanical parallel polishing and chemica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b727ea8eb10e70d4c8f6987fcb6e84ea
https://doi.org/10.31399/asm.cp.istfa2017p0597
https://doi.org/10.31399/asm.cp.istfa2017p0597
Autor:
Zhihong Mai, J. Lam, H.P. Ng, Siong Luong Ting, C.Q. Chen, Angela Teo, G.B. Ang, P.T. Ng, Francis Rivai
Publikováno v:
International Symposium for Testing and Failure Analysis.
As semiconductor technology keeps scaling down, failure analysis and device characterizations become more and more challenging. Global fault isolation without detailed circuit information comprises the majority of foundry EFA cases. Certain suspected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4931adbf5075823fbc33e90be4a9862e
https://doi.org/10.31399/asm.cp.istfa2017p0427
https://doi.org/10.31399/asm.cp.istfa2017p0427
Autor:
J. Lam, H.P. Ng, C.Q. Chen, Zhihong Mai, G.B. Ang, D. Nagalingam, P.T. Ng, K. H. Yip, Francis Rivai
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
As the development of semiconductor process, more and more advanced technologies were applied in the IC manufacturing. The device becomes more precise, and more sensitive to the minor process variation. Failure analysis challenge comes along with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1895d6b4ac7a3380fc5647ca04c6195
https://doi.org/10.1109/ipfa.2017.8060148
https://doi.org/10.1109/ipfa.2017.8060148
Autor:
G.B. Ang, Y.T. Ngow, B.L. Yeoh, Hnin Hnin W Ma, Jeffrey Lam, Lin Zhao, S.P. Neo, Y.H. Chan, Alan Tan, C.C. Tay, Varun Gupta, Hu Hao, G.F. You, S.H. Goh, M. Lee
Publikováno v:
International Symposium for Testing and Failure Analysis.
EeLADA has been introduced previously as a prospective alternative approach to DFT scan diagnosis for scan logic defect localization. It has the capability to reveal induced signals from laser stimulation that are relevant to the failure signature by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa8bcccd3b7e21ecc25857dadca2f1c3
https://doi.org/10.31399/asm.cp.istfa2016p0540
https://doi.org/10.31399/asm.cp.istfa2016p0540
Autor:
Zhihong Mai, S. Moon, Alfred Quah, Jeffrey Lam, D. Nagalingam, G.B. Ang, H.H. Ma, S.P. Neo, C.Q. Chen, E. Susanto
Publikováno v:
International Symposium for Testing and Failure Analysis.
In this paper, the effects of an open defect resulting in floating gate on combinational logic gate structures are studied. From this study, a novel method is derived to predict and narrow down the potential open defect location from a long failure p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab588f11b7aae8da73e91775b18182f
https://doi.org/10.31399/asm.cp.istfa2016p0520
https://doi.org/10.31399/asm.cp.istfa2016p0520
Autor:
H.P. Ng, Naiyun Xu, C. Q. Chen, Angela Teo, G.B. Ang, Nagalingam Dayanand, Jeffrey Lam, Zhihong Mai, Alfred Quah
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper discussed on how the importance of failure analysis to identify the root cause and mechanism that resulted in the MEMS failure. The defect seen was either directly on the MEMS caps or the CMOS integrated chip in wafer fabrication. Two case
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::729fff54be613fe30da4970a19fed8d0
https://doi.org/10.31399/asm.cp.istfa2016p0188
https://doi.org/10.31399/asm.cp.istfa2016p0188