Zobrazeno 1 - 10
of 25
pro vyhledávání: '"G.A. Rezvani"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:1034-1043
An analytical method, along with closed-form solutions, to determine high-frequency (HF) noise parameters of the MOSFET from its noise figure (NF) measurements with an arbitrary source impedance is presented and experimentally verified. This method a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57db8b41472008ec021720d9d1c63c48
https://doi.org/10.1109/jssc.2007.894309
https://doi.org/10.1109/jssc.2007.894309
Publikováno v:
IEEE Transactions on Electron Devices. 53:2062-2081
Compact modeling of the most important high-frequency (HF) noise sources of the MOSFET is presented in this paper, along with challenges in noise measurement and deembedding of future CMOS technologies. Several channel thermal noise models are review
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f33d9cdb898e1c679b34d86c0c205ada
https://doi.org/10.1109/ted.2006.880370
https://doi.org/10.1109/ted.2006.880370
Autor:
M. Brunsman, Guofu Niu, G.A. Rezvani, C.P. Chao, C. Xie, Zhiming Feng, H.C. Tseng, Shuo-Mao Chen, Yan Cui
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
A new gate controlled bipolar transistor is introduced in this paper which combines the lateral and vertical bipolar effect in standard NMOS device in a 90 nm triple well process technology. A current gain of more than 200, cut off frequency of about
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b96f6fc682fab987642e81b9d93b1bf0
https://doi.org/10.1109/bipol.2008.4662706
https://doi.org/10.1109/bipol.2008.4662706
Publikováno v:
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.
In this paper, considerations for accurate de-embedding technique using the "open-thru" de-embedding methodology, aimed at de-embedding of high quality factor (Q) radio frequency integrated circuit (RFIC) inductors will be presented. In addition, pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d3b96e7c8861fccba4766b5ff4b06af
https://doi.org/10.1109/rfic.2007.380921
https://doi.org/10.1109/rfic.2007.380921
Autor:
Jon Tao, G.A. Rezvani
Publikováno v:
Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005..
Various methods of substrate isolation in a typical 0.18 /spl mu/m CMOS process technology, with and without deep nwell (DNW), have been studied. Results are presented on the impacts of guard ring, substrate contact size and proximity, and DNW at var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5f04424ce5f32cb45d73a40e81df5b
https://doi.org/10.1109/icmts.2005.1452244
https://doi.org/10.1109/icmts.2005.1452244
Publikováno v:
IEEE Electron Device Letters. 16:169-171
This paper presents a new SRAM cell concept which offers cell scaling without requiring complicated, specialized processing technology. The proposed cell utilizes a bipolar transistor in an open-base (base is floating) configuration as a simple means
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ec25afe049495636f73583ce6b6b804
https://doi.org/10.1109/55.382229
https://doi.org/10.1109/55.382229
Autor:
P. Nielson, A. Kablanian, B. Eitan, E. Shacham, J. Perry, R. B. Sethi, K. Chhor, M. Shamay, G.A. Rezvani, Graham R. Wolstenholme, H. Gaffur, P. Kauk, R. Kazerounian, Hosam Haggag, L. Anderson, R. Irani, Albert Bergemont, Anirban Roy
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
The alternate metal virtual ground EPROM array (AMG) is introduced as a new scaling concept. This array dramatically reduces cell size by making poly pitch the only limitation in both X and Y directions. The AMG concept scales cell size by sharing on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ba28319e860137932fd0ca9f626293e
https://doi.org/10.1109/iedm.1991.235441
https://doi.org/10.1109/iedm.1991.235441
Publikováno v:
Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
The charge based capacitance measurement (CBCM) technique (Chen et al, IEDM p. 69, 1996) was used in order to measure femto-farad level intermetal capacitances between metal lines in different configurations. The results are presented and compared wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa066fd599d8f1c677ab86a03fcf758d
https://doi.org/10.1109/iitc.1998.704785
https://doi.org/10.1109/iitc.1998.704785
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Conference
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