Zobrazeno 1 - 10
of 39
pro vyhledávání: '"G.A. Dixit"'
Autor:
G.A Dixit
Publikováno v:
Vacuum. 51:723-727
Sputtering and plasma assisted/enhanced chemical vapor deposition have been the main stream processing techniques in the semiconductor industry. Due to the scaling of integrated circuits and the consequent increase in aspect ratios of features such a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8d84335a8d59625dedfef54a0bd208f
https://doi.org/10.1016/s0042-207x(98)00294-2
https://doi.org/10.1016/s0042-207x(98)00294-2
Autor:
G.A. Dixit, W.M. Morris, M. Zamanian, F.T. Lieu, F.S. Chen, J. Huang, Frank Randolph Bryant, C.C. Wei, Y.S. Lin, C.D. Waggoner, L. Lu, L. Nguyen, P. Sagarwala, C.R. Spinner, K. Huang
Publikováno v:
Proceedings of the IEEE Custom Integrated Circuits Conference.
A high performance manufacturable 0.7pm triple metal technology has been developed on SGS-Thomson’s HCMOS4 twin-well CMOS process. Improvements in metal processes to obtain reliable barrier layer and excellent step coverage make it possible to use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ece61dedd640b1229c4d3260b5e8ced4
https://doi.org/10.1109/cicc.1992.591273
https://doi.org/10.1109/cicc.1992.591273
Autor:
Q.Z. Hong, Jorge A. Kittl, G.A. Dixit, P.P. Apte, Amitava Chatterjee, Ih-Chin Chen, Douglas A. Prinslow
Publikováno v:
Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bb433854cab42b966e5e2c4a56467ee
https://doi.org/10.1109/vtsa.1997.614719
https://doi.org/10.1109/vtsa.1997.614719
Autor:
G.A. Dixit, W.Y. Hsu, A.J. Konecni, S. Krishnan, J.D. Luttmer, R.H. Havemann, J. Forster, G.D. Yao, M. Narasimhan, Z. Xu, S. Ramaswami, F.S. Dhen, J. Nulman
Publikováno v:
International Electron Devices Meeting. Technical Digest.
An inductively coupled plasma (ICP) source is used to produce an ion metal plasma (IMP) in the PVD chamber which has excellent directionality. Compared to collimated PVD titanium liners the electrical results of 0.3 /spl mu/m contact and via structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a249f715520b3145a1248fd1209b4c66
https://doi.org/10.1109/iedm.1996.553602
https://doi.org/10.1109/iedm.1996.553602
Publikováno v:
1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference.
This work investigates the reliability issues associated with an aluminum process, called the Al-plug process, that results in the complete filling of submicron contacts and vias. It has been demonstrated that the Al-plug process is a viable means of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9e73756708d7c7a279065c3b9682cbd
https://doi.org/10.1109/vmic.1991.153041
https://doi.org/10.1109/vmic.1991.153041
Publikováno v:
1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers.
The authors describe stacked contact/via technology with Al-plug metallization that results in complete filling of submicron contacts and vias of various sizes. The Al-plug process can be done in a conventional sputtering system. Physical and electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4fe51501049ba75f1671ffdee0a43a2
https://doi.org/10.1109/vtsa.1991.246700
https://doi.org/10.1109/vtsa.1991.246700
Publikováno v:
International Technical Digest on Electron Devices.
The authors describe an aluminum sputter process, called the Al-plug process, which results in complete filling of submicron contacts and vias of various sizes. The process can be done in a conventional sputtering system. Material and electrical char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc6536fdc70cfb48275f6248d422a53
https://doi.org/10.1109/iedm.1990.237228
https://doi.org/10.1109/iedm.1990.237228
Autor:
S.P. Ashburn, S. Krishnan, G.A. Dixit, M. Rodder, K. Taylor, T. Breedijk, I.-C. Chen, M.W. Goodwin, A.L. Esquivel
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
For advanced sub-micron CMOS technologies, the trend is to use lower temperature post-SALICIDE processing to minimize degradation to narrow gate sheet resistance and source/drain series resistance. Plasma assisted deposition processes may be used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df15a82791882e6a5ac00c094062424d
https://doi.org/10.1109/iedm.1997.650421
https://doi.org/10.1109/iedm.1997.650421
Publikováno v:
1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers.
An inductively coupled plasma has been used to produce contacts and vias with sub-half micron geometries. This process achieves etch selectivities >50:1, much higher than those previously obtained. Higher etch selectivity resulted in contacts and via
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7283fe57e170643ffee890a6d8aa2dd
https://doi.org/10.1109/vtsa.1995.524659
https://doi.org/10.1109/vtsa.1995.524659
Autor:
V.S. Raghunathan, G.A. Dixit
Publikováno v:
Scripta Metallurgica. 20:195-199
La phase I qui presente une symetrie de groupe ponctuel icosaedrique a une composition proche de 22%at. Mn. Dans l'etat brut de trempe, cette phase comporte des defauts sous forme de variations d'empilement non encore caracterises. Un traitement ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cc8fba7c325bb6d1bd4ffd60ce2cbf7
https://doi.org/10.1016/0036-9748(86)90125-0
https://doi.org/10.1016/0036-9748(86)90125-0