Zobrazeno 1 - 10
of 52
pro vyhledávání: '"G.-C. Hua"'
Publikováno v:
European review for medical and pharmacological sciences. 25(8)
This study aimed to compare the efficacy of intranasal (IN) ketamine for pain control with placebo and other analgesics in an emergency setting.Electronic databases of PubMed, Embase, and CENTRAL were searched for randomized controlled trials (RCTs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::9a00b8ea4d2706ab6dc4b308845989e0
https://pubmed.ncbi.nlm.nih.gov/33928616
https://pubmed.ncbi.nlm.nih.gov/33928616
Autor:
C.-C. Chu, Leslie A. Kolodziejski, E. Ho, Arto V. Nurmikko, G. C. Hua, Robert L. Gunshor, T. B. Ng, E. L. Warlick, J. Han
Publikováno v:
Journal of Crystal Growth. :552-557
Early blue/green laser diodes based on ZnSe exhibited room temperature, continuous wave (cw) lifetimes of the order of a minute. Similar to the history of (Al,Ga)As lasers, the source of the degradation was the presence of extended crystalline defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af15f1ba77a7bf9ddfbfa38323911a49
https://doi.org/10.1016/s0022-0248(96)01024-x
https://doi.org/10.1016/s0022-0248(96)01024-x
Autor:
D. J. Dougherty, Gale S. Petrich, Leslie A. Kolodziejski, J.L. House, G.-C. Hua, Erich P. Ippen
Publikováno v:
Applied Surface Science. :472-478
The integration of II–VI and III–V semiconductors into a single II–VI/III–V heterojunction device enables the exploitation of the many similarities, as well as the many differences, in material properties (energy bandgap, lattice constant, di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f11e91da6f2b23fc6df0c8c1f612b6b3
https://doi.org/10.1016/s0169-4332(96)00189-4
https://doi.org/10.1016/s0169-4332(96)00189-4
Publikováno v:
Journal of Crystal Growth. 159:1-10
Laser device lifetime is linked to electrical dissipation, hence vertical transport. One significant issue is the resistivity of ZnSe and alloys of ZnSe. The results of our recent studies into the origins of both doping level limitations in ZnSe, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58892bbcbb175c67daf1d8e25e5b829d
https://doi.org/10.1016/0022-0248(95)00776-8
https://doi.org/10.1016/0022-0248(95)00776-8
Publikováno v:
Journal of Electronic Materials. 25:263-267
ZnMgSSe and ZnSSe layers grown on GaAs substrates with GaAs buffer layers by molecular beam epitaxy have been examined by transmission electron microscopy (TEM). The depth level at which paired triangular stacking faults are nucleated in the ZnMgSSe/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c740906d3528d7536b44bacf161096a4
https://doi.org/10.1007/bf02666255
https://doi.org/10.1007/bf02666255
Publikováno v:
Journal of Electronic Materials. 24:475-481
CdTe(lll)B layers have been grown on misoriented Si(001). Twin formation inside CdTe(lll)B layer is very sensitive to the substrate tilt direction. When Si(001) is tilted toward [110] or [100], a fully twinned layer is obtained. When Si(001) is tilte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ee7db236cd2af6db1e5cdeeb8f48d6c
https://doi.org/10.1007/bf02657950
https://doi.org/10.1007/bf02657950
Autor:
Jung Han, M. D. Ringle, D. C. Grillo, L. He, Arto V. Nurmikko, Nobuo Otsuka, A. Salokatve, M. Hovinen, G. C. Hua, Y. Fan, Heonsu Jeon, Robert L. Gunshor
Publikováno v:
Materials Science and Engineering: B. 28:51-54
Continuous-wave laser operation at room temperature was obtained from a (Zn,Mg)(S,Se)-based II–VI separate-confinement heterostructure where injection of holes into the p-type quaternary was achieved through the employment of a Zn(Se,T) graded-band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::800a27ef97daabc76f3187aae6a8fb2f
https://doi.org/10.1016/0921-5107(94)90014-0
https://doi.org/10.1016/0921-5107(94)90014-0
Autor:
Robert L. Gunshor, M. D. Ringle, Y. Fan, Nobuo Otsuka, D. C. Grillo, J. Han, L. He, G. C. Hua
Publikováno v:
Journal of Crystal Growth. 138:464-470
In this paper both horizontal and vertical transport properties of ZnSe based heterostructures were studied. Temperature-dependent Hall effect measurements were performed on nitrogen-doped ZnSe, ZnTe, Zn(S,Se) and (Zn,Mg)(S,Se) epilayers; accepter co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3de0f745cdf9bf6289240e6611af0628
https://doi.org/10.1016/0022-0248(94)90851-6
https://doi.org/10.1016/0022-0248(94)90851-6
Publikováno v:
Journal of Crystal Growth. 138:367-372
The occurence of phase separation in (100) ZnSe 1− x S x and Zn 1− y Mg y Se 1− x S x layers grown by molecular beam epitaxy was found by transmission electron microscopy. The direction of the phase separation is [011], and the period of the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e92b9d363e3cd6bd2a74fed20c9418a
https://doi.org/10.1016/0022-0248(94)90835-4
https://doi.org/10.1016/0022-0248(94)90835-4
Autor:
Nobuo Otsuka, J. Ding, Masakazu Kobayashi, Robert L. Gunshor, Heonsu Jeon, Arto V. Nurmikko, G. C. Hua, D. C. Grillo, W. Xie
Publikováno v:
Journal of Electronic Materials. 22:441-444
The use of a nitrogen radio frequency plasma source together with an appropriate quantum well configuration have recently resulted in the successful realization of p-type ZnSe by molecular beam epitaxy. This has enabled a variety of pn heterojunction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24350bca529e7c313f0174e61c77a26b
https://doi.org/10.1007/bf02661610
https://doi.org/10.1007/bf02661610