Zobrazeno 1 - 10
of 198
pro vyhledávání: '"G. von Plessen"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Karl Krämer, Heiko Steinkemper, Florian Hallermann, Stefan Fischer, Daniel Biner, Martin Hermle, G. von Plessen, Jan Christoph Goldschmidt
Publikováno v:
IEEE Journal of Photovoltaics. 2:134-140
Upconversion (UC) of subbandgap photons has the potential to increase solar cell efficiencies. In this paper, we first review our recent investigations of silicon solar cell devices with an attached upconverter based on β-NaYF4 :20%Er3+. Such device
Autor:
Sergei G. Tikhodeev, Nikolai A. Gippius, Uli Lemmer, Georg Bastian, G. von Plessen, J. Hetterich
Publikováno v:
IEEE Journal of Quantum Electronics. 43:855-859
We present an optimized design for a plasmonic metal-semiconductor-metal photodetector with interdigitated electrodes with subwavelength dimensions and a single GaInNAs quantum well (QW) as an absorbing layer. The excitation of surface plasmons at th
Publikováno v:
Applied Physics B. 84:229-232
The diffraction of obliquely incident light by single nanoholes in thin gold and silver films is studied using dark-field microspectroscopy. The single-hole spectra show a dominant transmission peak in the near infrared. It is considerably red shifte
Publikováno v:
Journal of Physics: Conference Series. 21:50-55
We have investigated the structural dynamics of gold nanoparticles induced by femtosecond light excitation. Structure evolution in both embedded particles (glass matrix or liquid water suspension) and quasi-free particles adsorbed on a solid surface
Publikováno v:
Chemical Physics. 299:183-191
Gold nanoparticles have been adsorbed as monolayers on silicon and glass substrates and the structure evolution following femtosecond laser excitation has been analyzed by means of time resolved X-ray scattering. The synchronization of the laser to t
Autor:
Ralph A. Sperling, Jana Crewett, Michael Forster, Florian Schindler, Jochen Feldmann, G. von Plessen, Uli Lemmer, John M. Lupton, Thomas A. Klar, Joachim Stehr, Alexander W. Holleitner, Ullrich Scherf
Publikováno v:
Advanced Materials. 15:1726-1729
Autor:
Heinrich Graener, K.-J. Berg, M. Kaempfe, G. von Plessen, Samuel Gresillon, Gunnar Berg, Jochen Feldmann, Michael Wulff, S. Kürbitz, Anton Plech
Publikováno v:
Europhysics Letters (EPL). 61:762-768
The lattice expansion and relaxation of noble-metal nanoparticles heated by intense femtosecond laser pulses are measured by pump-probe time-resolved X-ray scattering. Following the laser pulse, shape and angular shift of the (111) Bragg reflection f
Publikováno v:
The Journal of Chemical Physics. 117:3956-3960
We investigate the formation dynamics of self-assembled polyelectrolyte multilayers on glass substrates by in situ and ex situ second harmonic generation (SHG) measurements and atomic force microscopy (AFM). The time dependence of the SHG signal duri
Autor:
S. De Rinaldis, M. De Vittorio, M. De Giorgi, G. von Plessen, Mauro Lomascolo, R. Cingolani, Jochen Feldmann, Adriana Passaseo, C. Lingk
Publikováno v:
Physica status solidi. A, Applied research 190 (2002): 561–564. doi:10.1002/1521-396X(200204)190:2<561::AID-PSSA561>3.0.CO;2-O
info:cnr-pdr/source/autori:De Giorgi, M ; Lingk, C ; von Plessen, G ; Feldmann, J ; De Rinaldis, S ; De Vittorio, M ; Passaseo, A; Lomascolo, M ; Cingolani, R/titolo:Electron-hole dynamics in MOCVD-grown InGaAs%2FGaAs quantum dots emitting at 1.3 mu m/doi:10.1002%2F1521-396X(200204)190:2<561::AID-PSSA561>3.0.CO;2-O/rivista:Physica status solidi. A, Applied research/anno:2002/pagina_da:561/pagina_a:564/intervallo_pagine:561–564/volume:190
info:cnr-pdr/source/autori:De Giorgi, M ; Lingk, C ; von Plessen, G ; Feldmann, J ; De Rinaldis, S ; De Vittorio, M ; Passaseo, A; Lomascolo, M ; Cingolani, R/titolo:Electron-hole dynamics in MOCVD-grown InGaAs%2FGaAs quantum dots emitting at 1.3 mu m/doi:10.1002%2F1521-396X(200204)190:2<561::AID-PSSA561>3.0.CO;2-O/rivista:Physica status solidi. A, Applied research/anno:2002/pagina_da:561/pagina_a:564/intervallo_pagine:561–564/volume:190
A study of the electron-hole relaxation dynamics in metalorganic chemical vapour deposition (MOCVD)-grown InGaAs/GaAs quantum dots (QDs) emitting at 1.3 mum is presented. The photoluminescence (PL) rise and decay times are measured as functions of ca