Zobrazeno 1 - 10
of 14
pro vyhledávání: '"G. Zschatzsch"'
Autor:
Geert Hellings, G. Zschatzsch, Thomas Chiarella, Naoto Horiguchi, An De Keersgieter, Yuichiro Sasaki, Aaron Thean, M. Togo, Chew Soon Aik
Publikováno v:
2013 13th International Workshop on Junction Technology (IWJT).
Extension doping for FinFETs is more difficult compared with planar devices due to fin geometry. An amorphization problem for NMOS FinFETs and photo resist shadowing for CMOS FinFETs are pointed out when standard ion implantation (I/I) is used. Amorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8366b3262ba2cf81be7d72e20575ffc
https://doi.org/10.1109/iwjt.2013.6644496
https://doi.org/10.1109/iwjt.2013.6644496
Autor:
S. Kolling, Ajay Kumar Kambham, Andreas Schulze, Pierre Eyben, Jay Mody, Geert Eneman, G. Zschatzsch, A. De Keersgieter, T. Chiarella, Wilfried Vandervorst, Naoto Horiguchi, C. Drijbooms
Publikováno v:
2012 12th International Workshop on Junction Technology.
With the continued scaling of CMOS devices down to 32nm node and beyond, device performance is very sensitive to the lateral diffusion mechanisms influencing the effective channel length. Tools are thus, required to measure with sufficient resolution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57fe33b5a3bdb6d44d155bc5829cf14f
https://doi.org/10.1109/iwjt.2012.6212818
https://doi.org/10.1109/iwjt.2012.6212818
Autor:
T. Chiarella, G. Zschatzsch, Ajay Kumar Kambham, A. De Keersgieter, S. Kolling, Pierre Eyben, C. Drijbooms, Andreas Schulze, Wilfried Vandervorst, Jay Mody, Naoto Horiguchi, Geert Eneman, T. Y. Hoffmann
Publikováno v:
2011 International Electron Devices Meeting.
In this work, we demonstrate for the first time 3D-carrier profiling in FinFETs with nm-spatial resolution using SSRM. The results provide information on gate underlap, dopant conformality, source/drain doping profiles. The 3D-carrier profiles as ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::626d4c115dfbc306b2bca0f24ffa1c94
https://doi.org/10.1109/iedm.2011.6131498
https://doi.org/10.1109/iedm.2011.6131498
Autor:
G. Zschatzsch, M. Togo, Ajay Kumar Kambham, Bastien Douhard, Naoto Horiguchi, Jay Mody, B. Mizuno, Yuichiro Sasaki, M. Ogura, Shigenori Hayashi, Wilfried Vandervorst, Thomas Chiarella
Publikováno v:
2011 International Electron Devices Meeting.
A solution for conformal n-type finFET extension doping is demonstrated, yielding I ON values of 1.23 mA/µm at I OFF =100 nA/um at 1V. This high device performance results from 40% reduced external resistance, which in term is stemming from 130% inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc76c4ab64e8781c1d998742380ff264
https://doi.org/10.1109/iedm.2011.6131680
https://doi.org/10.1109/iedm.2011.6131680
Autor:
Wilfried Vandervorst, Ajay Kumar Kambham, Jay Mody, Nadine Collaert, Matthieu Gilbert, Pierre Eyben, S Kolling, G. Zschatzsch, Andreas Schulze, T. Y. Hoffmann, Thomas Chiarella, Liesbeth Witters
Publikováno v:
11th International Workshop on Junction Technology (IWJT).
For continued downscaling at 22nm node and beyond, FinFETs have now emerged as the device of choice due to an unprecedented combination of performance improvement (increased I d ) and power reduction (low leakage) [1]. A crucial aspect in the process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebfd57a2f80398d2102f8ce84c28134b
https://doi.org/10.1109/iwjt.2011.5970012
https://doi.org/10.1109/iwjt.2011.5970012
Publikováno v:
2009 International Workshop on Junction Technology.
In this work, the impact of carbon co-implantation on ultra shallow boron - plasma - doping profiles has been investigated. C is used as a co-implant due to its highly effective mechanism of transient enhanced diffusion and junction depth reduction.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::818488cad749f9ee0ef2e0eddf50ecca
https://doi.org/10.1109/iwjt.2009.5166235
https://doi.org/10.1109/iwjt.2009.5166235
Publikováno v:
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors.
We show that accurate mass metrology can determine how dopants are added or material is removed during the plasma doping process. In case of erosion, information of mass reduction rate and selectivity can be obtained. Although deposition and erosion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a7785090a112f5c83fed06a7ab6d0a6
https://doi.org/10.1109/rtp.2008.4690544
https://doi.org/10.1109/rtp.2008.4690544
Autor:
Erik Rosseel, G. Zschatzsch, Dirch Hjorth Petersen, Kristin De Meyer, Thomas Hoffmann, Geert Hellings, Aftab Nazir, Wilfried Vandervorst, Trudo Clarysse, Eddy Simoen, Peter Folmer Nielsen, Dunja Radisic, Ole Hansen
Publikováno v:
Electrochemical and Solid-State Letters. 14:H39
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a8000008ae1d1e942ccb3920be33319
https://doi.org/10.1149/1.3512990
https://doi.org/10.1149/1.3512990
Autor:
Matthieu Gilbert, Liesbeth Witters, Jay Mody, T. Y. Hoffmann, P. Schatzer, S Kolling, Malgorzata Jurczak, Nadine Collaert, Wilfried Vandervorst, Pierre Eyben, Thomas Chiarella, Naoto Horiguchi, Andreas Schulze, Ajay Kumar Kambham, G. Zschatzsch
Publikováno v:
ResearcherID
Atom probe tomography (APT) in conjunction with scanning spreading resistance microscopy (SSRM) is demonstrated for the first time to profile dopant and carrier distributions in FinFET-based devices with sub-nanometer resolution. These two techniques
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::626bbe25c9e0e1820fcf654bcf79494e
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000287495500074&KeyUID=WOS:000287495500074
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000287495500074&KeyUID=WOS:000287495500074
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