Zobrazeno 1 - 10
of 29
pro vyhledávání: '"G. Zanelatto"'
Autor:
A. D. Rodrigues, A. J. Chiquito, G. Zanelatto, A. G. Milekhin, A. I. Nikiforov, V. V. Ulyanov, O. P. Pchelyakov, D. R. T. Zahn, J. C. Galzerani
Publikováno v:
Advances in Condensed Matter Physics, Vol 2012 (2012)
Ge/Si heterostructures with Ge self-assembled quantum dots (SAQDs) grown at various temperatures by molecular beam epitaxy were investigated using resonant Raman spectroscopy and capacitance measurements. The occurrence of quantum confinement effects
Externí odkaz:
https://doaj.org/article/63fbb40c605341a1816b273560425ca1
Autor:
P. Camargo, L. Fernando Mengue, Marcelo Baptista Dohnert, V. Roque, L. Silva Dias, Ivo Rodrigues, Rodrigo Boff Daitx, G. Zanelatto, B. Chuaste Flores, G. Maciel Bello, M. dos Santos Júnior, L. Martins da Silva
Publikováno v:
Muscle Ligaments and Tendons Journal. 10:364
Autor:
J. C. Galzerani, A. K. Bakarov, Dietrich R. T. Zahn, G. Zanelatto, Alexander G. Milekhin, Steffen Schulze, A. I. Toropov, M.Yu Ladanov
Publikováno v:
Applied Surface Science. 234:45-49
We present a comparative study of InAs/AlAs periodical structures with InAs and AlAs quantum dots (QD’s) using infrared and Raman spectroscopies. Raman spectra were measured in a backscattering geometry using a micro-Raman setup to directly determi
Autor:
A. K. Bakarov, M.Yu Ladanov, Dietrich R. T. Zahn, G. Zanelatto, Alexander G. Milekhin, Steffen Schulze, A. I. Toropov, J. C. Galzerani
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 21:241-246
In this paper we present an experimental comparative study of InAs/AlAs periodical structures with InAs and AlAs quantum dots (QDs) by means of infrared and Raman spectroscopies. The first observation of optical phonons localized in InAs and AlAs QDs
Autor:
G. Zanelatto, D. H. Mosca, E. M. Kakuno, Irineu Mazzaro, E. Silveira, Victor H. Etgens, M. Eddrief, Wido H. Schreiner, J. C. Galzerani
Publikováno v:
Journal of Applied Physics. 92:3569-3572
The thermal evolution of a ZnSe epilayer grown by molecular beam epitaxy on GaAs(001) has been studied by high resolution x-ray diffraction as well as photoelectron and Raman spectroscopies. Sequential annealing of a relaxed epilayer reveals a fast m
Autor:
G. Zanelatto, S.W. da Silva, P.P. González-Borrero, P. Basmaji, Yu. A. Pusep, J. C. Galzerani, A. I. Toropov
Publikováno v:
Scopus-Elsevier
Interface vibrational modes localized at the apexes of pyramidal InAs self-assembled quantum dots embedded in GaAs were observed by resonance Raman scattering. The comparison of the frequency positions of the interface modes with those obtained theor
Autor:
G. Zanelatto, J. C. Galzerani, O. P. Pchelyakov, Dietrich R. T. Zahn, A. D. Rodrigues, A. I. Nikiforov, A. J. Chiquito, Alexander G. Milekhin, V. V. Ul’yanov
Publikováno v:
Advances in Condensed Matter Physics, Vol 2012 (2012)
Ge/Si heterostructures with Ge self-assembled quantum dots (SAQDs) grown at various temperatures by molecular beam epitaxy were investigated using resonant Raman spectroscopy and capacitance measurements. The occurrence of quantum confinement effects
Publikováno v:
Applied Physics Letters. 81:4766-4768
We examine the relationship between the transport and magnetic properties of digital ferromagnetic heterostructure superlattices in which 0.5 monolayer MnAs planes alternate with undoped GaAs spacer layers. The data show that as the thickness t of th
Publikováno v:
Journal of Applied Physics. 86:4387-4389
The topology of self-assembled InAs/GaAs quantum dots was studied by resonant Raman scattering caused by the interface modes localized near the edges of the dots. Evidences were found that on both sides of the InAs layer containing the dots, their to
Publikováno v:
Physical Review Letters. 94
The localization properties of the single-particle and collective electron excitations were investigated in the intentionally disordered GaAs/AlGaAs superlattices by weak-field magnetoresistance and Raman scattering. The localization length of the in