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pro vyhledávání: '"G. Zandler"'
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Autor:
Jacek A. Majewski, P. Vogl, Richard Morschl, Till F. M. Andlauer, Matthias Sabathil, S. Hackenbuchner, T. Zibold, G. Zandler, Alex Trellakis, Stefan Birner
Publikováno v:
Acta Physica Polonica A. 110:111-124
nextnano 3 is a simulation tool that aims at providing global insight into the basic physical properties of realistic three-dimensional mesoscopic semiconductor structures. It focuses on quantum mechanical properties such as the global electronic str
Publikováno v:
Computational Materials Science. 30:81-91
A key property of the nitrides is the fact that they possess large spontaneous and piezoelectric polarization fields that allow a significant tailoring of the carrier dynamics and optical properties of nitride devices. In this paper, we review our re
Publikováno v:
Journal of Physics: Condensed Matter. 14:3511-3522
A key property of the nitrides is the fact that they possess large spontaneous and piezoelectric polarization fields that allow a significant tailoring of the carrier dynamics and optical properties of nitride devices. In this paper, based on first-p
Autor:
Paolo Lugli, S. Hackenbuchner, E. Beham, Jacek A. Majewski, G. Zandler, P. Vogl, Matthias Sabathil, Artur Zrenner
Publikováno v:
Physica B: Condensed Matter. 314:145-149
A method is developed for calculating, in a consistent manner, the realistic electronic structure of three-dimensional (3-D) heterostructure quantum devices under bias and its current density close to equilibrium. The nonequilibrium electronic struct
Publikováno v:
Journal of Computational Electronics. 1:81-85
We present a simulator for calculating, in a consistent manner, the realistic electronic structure of three-dimensional heterostructure quantum devices under bias and its current density close to equilibrium. The electronic structure is calculated fu
Publikováno v:
Journal of Crystal Growth. 230:607-610
The generation of high density 2D hole gases is crucial for further progress in the electronic and optoelectronic nitride devices. In this paper, we present systematic theoretical studies of Mg-doped GaN/AlGaN gated heterostructures and superlattices
Publikováno v:
Acta Physica Polonica A. 100:249-260
Publikováno v:
IEEE Transactions on Electron Devices. 48:2188-2191
In this paper, the effect of a body contact (BC) to quench breakdown effects and increase the breakdown voltage in high-electron mobility transistors (HEMTs) is theoretically investigated. The body contact is formed by a highly p-type doped substrate
Autor:
G. Zandler, Karl Unterrainer, Gottfried Strasser, Rudolf Bratschitsch, W. Fischler, R. A. Höpfel
Publikováno v:
Semiconductor Science and Technology. 15:813-817
Coherent plasmon-phonon coupled modes in intrinsic bulk GaAs are investigated for excitation energies around the band gap. The frequencies of the coherent terahertz plasmons lie on the lower branch of the plasmon-phonon coupled modes. Their damping t