Zobrazeno 1 - 2
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pro vyhledávání: '"G. Ya. Moskalev"'
Publikováno v:
Semiconductors. 50:832-838
The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-d
Publikováno v:
Journal of Applied Spectroscopy. 34:237-241