Zobrazeno 1 - 10
of 107
pro vyhledávání: '"G. Y. Robinson"'
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 5:613-619
We present a novel analysis for correcting the measured differential carrier lifetime to account for carrier population in both the barrier and separate confinement heterostructure (SCH) regions of quantum-well (QW) lasers. This analysis uses informa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e22673f31112f11743d67e305e1d7fa1
https://doi.org/10.1109/2944.788425
https://doi.org/10.1109/2944.788425
Autor:
Dinesh Patel, K. Interholzinger, P. Thiagarajan, J.E. Fouquet, Carmen S. Menoni, G. Y. Robinson
Publikováno v:
IEEE Journal of Quantum Electronics. 34:93-100
The effect of strain on the band structure of In/sub x/Ga/sub 1-x/P-In/sub 0.5/Al/sub 0.5/P multiple quantum wells (MQW's) has been investigated from high-pressure and low-temperature photoluminescence measurements. The biaxial strain in the wells wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57226f330216c6ae56a954fe29763591
https://doi.org/10.1109/3.655012
https://doi.org/10.1109/3.655012
Publikováno v:
physica status solidi (b). 198:337-341
High pressure photoluminescence measurements used to study the band structure of the InxGa1−xP/In0.5Al0.5P (x ⩽ 0.48) multiple quantum wells revealed that in narrow-lattice-matched and highly tensile strain structures the L1c band is the lowest c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d214c49091f2f4b13d206eef384a47d2
https://doi.org/10.1002/pssb.2221980144
https://doi.org/10.1002/pssb.2221980144
Publikováno v:
Physical Review B. 53:12633-12636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64984d7ea8a478e553c3d6a01505ce39
https://doi.org/10.1103/physrevb.53.12633
https://doi.org/10.1103/physrevb.53.12633
Autor:
G. Y. Robinson, John E. Bowers, P. Silvestre, Mark J. W. Rodwell, Y. G. Wey, P. Thiagarajan, Kirk S. Giboney
Publikováno v:
Journal of Lightwave Technology. 13:1490-1499
Long-wavelength GaInAs/InP graded double heterostructure p-i-n photodiodes are demonstrated with 3-dB bandwidths over 100 GHz. The heterojunction hole trapping problem is significantly improved and the device contact resistivity is greatly reduced by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23e195c40356ede8a6f94a43a4072db1
https://doi.org/10.1109/50.400717
https://doi.org/10.1109/50.400717
Autor:
Juan L. A. Chilla, D.L. Lile, M.E. Watson, T.J. Vogt, Jorge J. Rocca, G. Y. Robinson, J.W. Kim
Publikováno v:
IEEE Journal of Quantum Electronics. 31:254-260
We report modulation saturation and time response measurements on InGaAs-InGaP MQW modulators. The measurements yield a saturation intensity of (3.7/spl plusmn/0.1) kW/cm/sup 2/ for a 0-10 V swing and switching times between 10 and 90 ns, depending o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0a7d731d06867ff1ce4c93d414fd52c
https://doi.org/10.1109/3.348053
https://doi.org/10.1109/3.348053
Autor:
P. Silvestre, Mowafak Al-Jassim, L.M. Woods, Kim M. Jones, P. Thiagarajan, G. Y. Robinson, G. A. Patrizi
Publikováno v:
Journal of Electronic Materials. 23:1229-1233
Quantum well (QW) structures consisting of InGaAsP wells and InGaAsP barriers grown by gas-source molecular beam epitaxy have been examined by low temperature photoluminescence (PL) in order to evaluate the contributions of compositional fluctuations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b76fa974e815d92fc7f740311a170ad
https://doi.org/10.1007/bf02649974
https://doi.org/10.1007/bf02649974
Autor:
G. Y. Robinson, M. Prasad, Juan L. A. Chilla, Oscar E. Martínez, M.J. Hafich, Jorge J. Rocca, Carmen S. Menoni
Publikováno v:
Journal of Electronic Materials. 23:359-362
The ambipolar diffusion coefficient and carrier recombination lifetime in InGaP/InAlP multiple quantum wells and InGaP epitaxial layers grown by gas source molecular beam epitaxy have been determined by measuring the diffraction efficiency decay of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d55473f762cbd7a91c3700bb9be5415
https://doi.org/10.1007/bf03296065
https://doi.org/10.1007/bf03296065
Publikováno v:
Physical Review B. 48:18031-18036
The band structure of In 0.53 Ga 0.47 P/In 0.50 Al 0.50 P multiple quantum wells grown by molecular-beam epitaxy has been determined from pressure-dependent-photoluminescence measurements at low temperature. The photoluminescence signals from the dir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15357c1ba2492f70a462fe5aeffdc65a
https://doi.org/10.1103/physrevb.48.18031
https://doi.org/10.1103/physrevb.48.18031
Publikováno v:
Journal of Electronic Materials. 21:129-133
The influence of growth interruption during the MBE growth of (100) In0.5Ga0.5P/GaAs superlattices is investigated by cross-sectional TEM. A roughening of the growth front is observed during an interruption after the exchange of the group-V molecular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84e9ade6a3c01d5b6ec7873ac6fe7c7a
https://doi.org/10.1007/bf02670933
https://doi.org/10.1007/bf02670933