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pro vyhledávání: '"G. Y. Odo"'
Publikováno v:
Journal of Applied Crystallography. 34:465-472
Amorphous hydrogenated silicon carbide thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) at temperatures ranging from 573 to 623 K, with different concentrations of silane and methane, exploring two deposition parameters:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12e4002e57f20929f652ec3c92161139
https://doi.org/10.1107/s0021889801007889
https://doi.org/10.1107/s0021889801007889
