Zobrazeno 1 - 9
of 9
pro vyhledávání: '"G. Y. Ayvazyan"'
Publikováno v:
Thermophysics and Aeromechanics. 29:965-973
Publikováno v:
Journal of Contemporary Physics (Armenian Academy of Sciences). 57:274-279
Autor:
F. V. Gasparyan, G. Y. Ayvazyan
Publikováno v:
Journal of Contemporary Physics (Armenian Academy of Sciences). 57:160-165
Autor:
V. R. Shayapov, M. Yu. Afonin, M. V. Katkov, M. S. Lebedev, A. V. Aghabekyan, I. V. Yushina, D. E. Petukhova, G. Y. Ayvazyan, E. A. Maksimovskii
Publikováno v:
Journal of Contemporary Physics (Armenian Academy of Sciences). 56:240-246
The results of experimental studies of the anti-reflection properties of black silicon (b-Si) layers coated with thin films of TiO2, HfO2, and Sc2O3 metal oxides by atomic layer deposition (ALD) are presented. An improvement in the antireflection pro
Publikováno v:
Journal of Contemporary Physics (Armenian Academy of Sciences). 55:16-22
Using the finite difference time domain (FDTD) method, we studied the optical properties of black silicon (BSi) layers passivated with the various metal oxides (Al2O3, TiO2, HfO2, and Sc2O3) films, obtained by atomic layer deposition (ALD) method. Th
Autor:
A. V. Semchenko, V. V. Sidsky, O. I. Tyulenkova, V. E. Gaishun, D. L. Kovalenko, G. Y. Ayvazyan, L. A. Hakhoyan
Publikováno v:
Research and Education: Traditions and Innovations ISBN: 9789811903786
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed63bb32482ae2b71889c0915a5481b2
https://doi.org/10.1007/978-981-19-0379-3_21
https://doi.org/10.1007/978-981-19-0379-3_21
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
This paper reports the investigation on the passivation properties of the hafnium dioxide (Hf02) film deposited on n-type black silicon (b-Si) surface via atomic layer deposition (ALD) method. It is shown that in addition to efficient passivation, Hf
Publikováno v:
2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP).
We present investigations of optical properties of black silicon (b-Si) nanostructures passivated with several high-k metal oxides (Al 2 O 3 , TiO 2 , HfO 2 and Sc 2 O 3 ), obtained by atomic layer deposition (ALD) method. The reflectivity was studie
Autor:
V. E. Gaishun, G. Y. Ayvazyan, Sergei Khakhomov, D. L. Kovalenko, S. K. Khudaverdyan, V. V. Vaskevich
Publikováno v:
Lecture Notes in Networks and Systems ISBN: 9783030368401
The paper describes the sol-gel method for producing photocatalytic materials based on titanium oxide. The temperature-time regimes of heat treatment of the obtained materials are determined. The surface properties of the resulting coatings were stud
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23d7b03af2683b629750850f2cc2d7d0
https://doi.org/10.1007/978-3-030-36841-8_4
https://doi.org/10.1007/978-3-030-36841-8_4