Zobrazeno 1 - 10
of 37
pro vyhledávání: '"G. W. Charache"'
Autor:
C. A. Wang, G. W. Charache, P. F. Baldasaro, Ronald J. Gutmann, J.M. Borrego, S. Saroop, T. Donovan
Publikováno v:
Journal of Applied Physics. 89:3753-3759
Transient radio frequency photoreflectance measurements were performed on 0.53 eV p-type InGaAsSb double heterostructures, grown by organometallic vapor phase epitaxy on lattice matched GaSb substrates, for determining excess carrier lifetime. Direct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::695c87e562c521a9f2d72b696d12b962
https://doi.org/10.1063/1.1351869
https://doi.org/10.1063/1.1351869
Autor:
J. E. Raynolds, D. M. DePoy, J.M. Borrego, G. W. Charache, C. T. Ballinger, T. Donovan, P. F. Baldasaro
Publikováno v:
Journal of Applied Physics. 89:3319-3327
This report presents an assessment of the efficiency and power density limitations of thermophotovoltaic (TPV) energy conversion systems for both ideal (radiative limited) and practical (defect-limited) systems. Thermodynamics is integrated into the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f720aa5d9a6d584da70c01c934652768
https://doi.org/10.1063/1.1344580
https://doi.org/10.1063/1.1344580
Publikováno v:
Journal of Applied Physics. 87:1780-1787
The optical constants e(E)[=e1(E)+ie2(E)] of two epitaxial layers of GaInAsSb/GaSb have been measured at 300 K using spectral ellipsometry in the range of 0.35–5.3 eV. The e(E) spectra displayed distinct structures associated with critical points (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73de0984c747f6d650be131e573d9e50
https://doi.org/10.1063/1.372092
https://doi.org/10.1063/1.372092
Publikováno v:
Physical Review B. 60:8105-8110
The optical constants $\ensuremath{\epsilon}(E)[={\ensuremath{\epsilon}}_{1}(E)+i{\ensuremath{\epsilon}}_{2}(E)]$ of single crystal GaSb at 300 K have been measured using spectral ellipsometry in the range of 0.3--5.3 eV. The $\ensuremath{\epsilon}(E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42e504e74fdf03c6caae40b6eb9e57c0
https://doi.org/10.1103/physrevb.60.8105
https://doi.org/10.1103/physrevb.60.8105
Publikováno v:
Journal of Applied Physics. 86:1527-1534
Recombination processes in antimonide-based materials for thermophotovoltaic (TPV) devices have been investigated using a radio-frequency (rf) photoreflectance technique, in which a Nd–YAG pulsed laser is used to excite excess carriers, and the sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d0505542365ef9de869a0f1f3f93f11
https://doi.org/10.1063/1.370925
https://doi.org/10.1063/1.370925
Publikováno v:
Journal of Applied Physics. 86:835-840
The extent of relative tilt angle, crystalline quality, and relaxation of GaxIn1−xSb layers grown on (001) GaSb substrates by organometallic vapor phase epitaxy have been investigated, using double-crystal x-ray diffraction and transmission electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c819a4f86136ada0b9e1a4cda03b3d54
https://doi.org/10.1063/1.370811
https://doi.org/10.1063/1.370811
Moss–Burstein and plasma reflection characteristics of heavily doped n-type InxGa1−xAs and InPyAs1−y
Autor:
Walter Wolf, D. M. DePoy, Arthur J Freeman, Fred H. Pollak, P. F. Baldasaro, Paul Sharps, Todd Holden, W. Mannstadt, Ryoji Asahi, Michael Timmons, Clint B. Geller, K. E. Miyano, J. E. Raynolds, G. W. Charache
Publikováno v:
Journal of Applied Physics. 86:452-458
Degenerately doped (>1019 cm−3) n-type InxGa1−xAs (x∼0.67) and InPyAs1−y (y∼0.65) possess a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::592656803641546b71681c8cfe13234c
https://doi.org/10.1063/1.370751
https://doi.org/10.1063/1.370751
Autor:
Collin Hitchcock, S. Shetty, M. Freeman, Ishwara B. Bhat, S. Dakshinamurthy, G. W. Charache, Ronald J. Gutmann
Publikováno v:
Journal of Electronic Materials. 28:355-359
The GaInSb material system is attractive for application in therm ophotovoltaic (TPV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the TPV cells are fabricated using epitaxial layers and hence are e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04a11360f8e9142cd7fdd5af23fbf8d3
https://doi.org/10.1007/s11664-999-0232-6
https://doi.org/10.1007/s11664-999-0232-6
Autor:
L. R. Danielson, Christine A. Wang, D. M. DePoy, Dmitri Z. Garbuzov, H. K. Choi, M. Freeman, G. W. Charache, P. F. Baldasaro, V. B. Khalfin, Ronald J. Gutmann, J.M. Borrego, Ramon U. Martinelli, S. Saroop
Publikováno v:
Journal of Applied Physics. 85:2247-2252
The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1000 °C, which sets an upper limit on the TPV diode band gap of 0.6 eV from efficiency and power density considerations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c08e9f9470145eea88515eb213c77504
https://doi.org/10.1063/1.369533
https://doi.org/10.1063/1.369533
Publikováno v:
IEEE Transactions on Electron Devices. 46:2154-2161
Thermophotovoltaic (TPV) devices have been fabricated using ternary and quaternary layers grown by metalorganic vapor phase epitaxy (MOVPE) on GaSb substrates. GaInSb ternary devices were grown with buffer layers to accommodate the lattice mismatch,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0efb4d1002c01a88efac493a68e7dc10
https://doi.org/10.1109/16.792011
https://doi.org/10.1109/16.792011